Level-Shift Circuit Voltage Protection

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Solution Overview

Problem

Conventional level-shift circuits fail to effectively convert signal voltages across integrated circuits with different supply voltages, particularly when the supply voltage exceeds the punch-through voltage of transistors, leading to transistor damage and operational limitations.

Innovation Solution

A level-shift circuit design incorporating pre-stage and post-stage voltage conversion circuits with voltage protection modules and logic modules, utilizing transistors with punch-through voltages to generate inverse and output signals while maintaining stress below the punch-through voltage, and adjusting voltage conversion signals based on supply voltage levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional CMOS level-shift circuit is used to convert 0.9V to 3.3V, then voltage conversion is achieved, but transistors are punched-through due to supply voltage exceeding punch-through voltage

Engineering Contradiction:
Improvetransistor protection from punch-through damageVSAvoidcompatibility with multiple supply voltages
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The circuit dynamically adapts its configuration based on the supply voltage level. When supply voltage exceeds punch-through voltage, the circuit reconfigures to protect transistors; when supply voltage is below punch-through voltage, the circuit operates in a high-speed mode without protection constraints. This dynamic adaptation allows the same circuit to reliably handle multiple supply voltages (0.9V, 1.8V, 3.3V) while protecting transistors from damage.

Inventive Principle:
Principle #15Dynamics

2Adaptability or versatility

If transistors are designed to withstand high supply voltage (3.3V), then voltage conversion capability is improved, but transistor dimension must be increased which reduces operating speed

Engineering Contradiction:
Improvevoltage conversion capabilityVSAvoidoperating speed
Core Design Contradiction:
Adaptability or versatilityVSSpeed

Solution Approach 1:

The circuit changes its operational parameters based on the supply voltage. When operating at 3.3V, it uses a configuration that protects transistors from punch-through. When operating at lower voltages (0.9V, 1.8V), it switches to a high-speed configuration that maintains fast switching performance. This parameter change approach allows the circuit to achieve both high voltage conversion capability and high operating speed by optimizing for each voltage regime.

Inventive Principle:
Principle #35Parameter changes

3Use of energy by moving object

If supply voltage is reduced to lower power consumption, then power consumption is reduced, but voltage conversion to higher levels becomes more difficult

Engineering Contradiction:
Improvepower consumptionVSAvoidvoltage conversion capability
Core Design Contradiction:
Use of energy by moving objectVSAdaptability or versatility

Solution Approach 1:

The level-shift circuit is designed with multi-functionality to handle both low-voltage operation (0.9V, 1.8V) and high-voltage conversion (3.3V output). The circuit can operate efficiently at low supply voltages to minimize power consumption while still being capable of converting these low-voltage signals to 3.3V levels when needed. This universal design allows the circuit to serve multiple purposes: low-power operation and high-voltage conversion, making it adaptable to various power management scenarios.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9948287B2Level-shift circuits compatible with multiple supply voltage
Publication Date: 2018.04.17 VIA ALLIANCE SEMICON CO LTD
  • US9948287B2 patent drawing
  • US9948287B2 patent drawing
  • US9948287B2 patent drawing

AI summary

A level-shift circuit, receiving a supply voltage and a input signal, includes a pre-stage voltage conversion circuit and a post-stage voltage conversion circuit. The pre-stage voltage conversion circuit includes a first voltage protection module generating an inner conversion voltage and a first voltage conversion module converting the input signal into a pre-stage output signal according to the inner conversion voltage. The post-stage voltage conversion circuit includes a second voltage protection module generating a first inverse output signal, a first output signal, a second inverse output signal, and a second output signal. The transistors of the pre-stage voltage conversion circuit and the post-stage voltage conversion circuit have a punch-through voltage. The level-shift makes the stress of the transistors less than the punch-through voltage when the supply voltage is greater than the punch-through voltage, and remains the driving capability when being less than the punch-through voltage.