Level Shifter With Varying Isolation Dimensions
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Solution Overview
Problem
Existing level shifters in high voltage integrated circuits often experience leakage currents and breakdown voltage drops due to uneven electric field distribution, which affects their performance.
Innovation Solution
A level shifter design that includes a substrate with a buried island and an isolation structure of varying dimensions and doping concentrations, strategically positioned between high-side and low-side circuit areas to uniformly disperse high electric fields and suppress leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional level shifter is used in high voltage integrated circuits, then the device can perform level shifting between high-side and low-side circuit areas, but leakage currents are generated and breakdown voltage drops due to uneven electric field distribution
Solution Approach 1:
The isolation structure implements local quality by having different dimensions at different locations. Specifically, the first dimension of the isolation structure in the first region (near high-side circuit) is different from the second dimension in the second region (near low-side circuit), creating non-uniform doping concentration distribution that optimizes electric field control in different areas to suppress leakage while maintaining breakdown voltage.
Solution Approach 2:
The invention applies parameter changes by varying the physical dimensions of the isolation structure. The isolation structure's dimension is deliberately changed between regions to control the doping concentration profile, transforming the uniform structure into a non-uniform one that better manages electric field distribution and reduces both leakage current and breakdown voltage issues.
2Ease of manufacture
If the isolation structure has uniform dimensions throughout, then the manufacturing process is simpler, but the electric field distribution remains uneven causing performance degradation
Solution Approach 1:
The isolation structure is designed with local quality variations where different regions have different dimensions. The first region has a first dimension and the second region has a second dimension, creating localized property changes that optimize electric field distribution in each region without requiring completely different manufacturing processes.
Solution Approach 2:
The isolation structure is segmented into multiple regions with different dimensional characteristics. By dividing the isolation structure into a first region and a second region with different dimensions, the invention achieves complex electric field control while maintaining a relatively streamlined manufacturing approach compared to completely separate structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases breakdown voltage and reduces leakage currents, enhancing the overall performance of the semiconductor device by ensuring full depletion of the isolation region and uniform electric field distribution.
Implementation Method 1
uniformly disperse high electric fields and suppress leakage currents
Implementation Method 2
effectively suppressing a leakage current and increasing a breakdown voltage
Data Source
AI summary
A level shifter is provided. The level shifter is located between a high-side circuit area and a low-side circuit area and includes a substrate, a buried island, and an isolation structure. The buried island has a first conductivity type and is located in the substrate. The isolation structure has a second conductivity type, is located in the substrate and surrounds the buried island. In addition, a dimension of the isolation structure near the high-side circuit area is different from a dimension of the isolation structure near the low-side circuit area. A semiconductor device including the level shifter is also provided.