Integrating Level Shifter Transistor with Low-Side Power Transistor

Solution Overview

Problem

Existing semiconductor technologies face challenges in integrating power transistors and high-voltage devices in a common semiconductor body, particularly in half-bridge circuits where high-side transistors require level shifting, which often necessitates additional high-voltage devices, increasing manufacturing costs and device size.

Innovation Solution

A semiconductor arrangement that integrates a power transistor and a high-voltage device within a common semiconductor body, utilizing a well-like dielectric structure for the high-voltage device and edge termination to achieve voltage blocking capabilities, allowing for a shared semiconductor body without the need for additional high-voltage devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a level shifter with a high-voltage transistor is added to drive the high-side transistor, then the voltage blocking capability is improved, but the device size and manufacturing cost increase

Engineering Contradiction:

Improvevoltage blocking capabilityVSAvoiddevice size

Core Design Contradiction:

ReliabilityVSVolume of moving object

Solution Approach 1:

The patent merges the low-side transistor and level shifter transistor into a single common semiconductor body, integrating multiple functions into one device structure. This combination eliminates the need for separate discrete high-voltage devices while maintaining the required voltage blocking capability, thereby reducing overall device size and manufacturing cost.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The common semiconductor body serves multiple functions: it acts as both the low-side transistor substrate and the level shifter transistor substrate. The semiconductor body is designed to handle high-voltage blocking requirements while supporting both transistor types, making it a universal structure that eliminates the need for additional specialized high-voltage components.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If a level shifter with a high-voltage transistor is added to drive the high-side transistor, then the voltage blocking capability is improved, but the manufacturing cost increases

Engineering Contradiction:

Improvevoltage blocking capabilityVSAvoidmanufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent merges the low-side transistor and level shifter transistor into a single common semiconductor body, integrating multiple functions into one device structure. This combination eliminates the need for separate discrete high-voltage devices while maintaining the required voltage blocking capability, thereby reducing overall device size and manufacturing cost.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The common semiconductor body serves multiple functions: it acts as both the low-side transistor substrate and the level shifter transistor substrate. The semiconductor body is designed to handle high-voltage blocking requirements while supporting both transistor types, making it a universal structure that eliminates the need for additional specialized high-voltage components.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If additional high-voltage devices are used for level shifting, then the voltage blocking capability is improved, but the device complexity increases

Engineering Contradiction:

Improvevoltage blocking capabilityVSAvoiddevice complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the low-side transistor and level shifter transistor into a single common semiconductor body, integrating multiple functions into one device structure. This combination eliminates the need for separate discrete high-voltage devices while maintaining the required voltage blocking capability, thereby reducing overall device size and manufacturing cost.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The common semiconductor body serves multiple functions: it acts as both the low-side transistor substrate and the level shifter transistor substrate. The semiconductor body is designed to handle high-voltage blocking requirements while supporting both transistor types, making it a universal structure that eliminates the need for additional specialized high-voltage components.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS9490250B2Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body

Publication Date: 2016.11.08 INFINEON TECH AUSTRIA AG

AI summary

A half-bridge circuit includes a low-side transistor and a high-side transistor each having a load path and a control terminal. The half-bridge circuit further includes a high-side drive circuit having a level shifter with a level shifter transistor. The low-side transistor and the level shifter transistor are integrated in a common semiconductor body.