Breakdown-Protected Level Shifter With Lower Static Power
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Solution Overview
Problem
Conventional level shifters in integrated circuits face issues with transistor breakdown due to voltage fluctuations, leading to static power consumption as biasing circuits are always on to prevent breakdown, but these circuits continuously draw current.
Innovation Solution
The proposed level shifter design includes NMOS and PMOS transistors with specific voltage connections and a breakdown protection circuit, eliminating the need for continuous biasing circuits by limiting gate-to-source voltages below transistor breakdown levels, thereby reducing static power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If biasing circuits are always on to prevent transistor breakdown, then transistor reliability is improved, but static power consumption increases
Solution Approach 1:
The biasing circuits are made dynamic by enabling them only when voltage fluctuations exceed a threshold level that could cause transistor breakdown. The circuit transitions from a static always-on biasing approach to a dynamic conditional biasing approach, activating protection only when needed based on real-time voltage conditions.
Solution Approach 2:
The invention uses voltage-level detection mechanisms that function similarly to pressure sensors, detecting when voltage fluctuations reach critical levels and automatically activating the biasing circuits in response, creating a reactive protection system rather than a continuous one.
2Adaptability or versatility
If level shifter converts signal from lower voltage to higher voltage, then signal compatibility is improved, but transistor breakdown risk increases
Solution Approach 1:
The biasing circuits act as intermediary protective elements between the voltage conversion process and the transistors. When voltage fluctuations during level conversion exceed safe thresholds, these intermediary circuits activate to clamp or limit the voltage, preventing direct exposure of transistors to breakdown-inducing voltage levels.
Solution Approach 2:
The circuit implements preliminary protective action by detecting voltage fluctuations before they reach breakdown levels and preemptively activating biasing circuits to prevent transistor damage, rather than waiting for actual breakdown to occur.
Data Source
AI summary
Embodiments of the present disclosure provide a level shifter, including: first and second NMOS transistors, wherein the sources of the first and second NMOS transistors are coupled to a first voltage, the gate of the first NMOS transistor is connected to an inverse of an input signal that varies between a second voltage and a third voltage, and wherein the gate of the second NMOS transistor receives a buffer of the input signal. a breakdown protection circuit has third and fourth NMOS transistors, the gates of the third and fourth NMOS transistors being connected to the third voltage, the drain of the first NMOS transistor being connected to the source of the third NMOS transistor, and the drain of the second NMOS transistor being connected to the source of the fourth NMOS transistor. A pull-up circuit is connected to the drains of the third and fourth NMOS transistors.