Voltage Level Shifter Output Staging for Transistor Stress Relief

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Solution Overview

Problem

High-voltage levels across circuitry components in level shifters can cause degradation over time, leading to reliability issues.

Innovation Solution

Incorporating voltage stress reduction circuitry, which includes a smaller transistor connected in parallel to the victim transistor, to reduce the voltage spike and thereby decrease the stress on the transistor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If high-voltage level shifters are used to translate signals between voltage domains, then signal translation capability is improved, but transistor degradation increases leading to reduced reliability

Engineering Contradiction:
Improvesignal translation capabilityVSAvoidtransistor reliability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

A voltage stress reduction circuit is introduced as an intermediary component between the high-voltage domain and the transistor. This circuit includes a capacitor coupled to the transistor gate and a voltage source that provides a voltage offset, thereby mediating the voltage stress applied to the transistor and reducing degradation while maintaining signal translation functionality

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The voltage stress reduction circuit provides beforehand cushioning by pre-compensating for voltage spikes before they reach the transistor. The capacitor and voltage source are configured to anticipate and cushion against voltage stress, protecting the transistor from degradation before it occurs

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS12341509B2Systems and methods for improved reliability in voltage level shifters
Publication Date: 2025.06.24 MICRON TECHNOLOGY INC
  • US12341509B2 patent drawing
  • US12341509B2 patent drawing
  • US12341509B2 patent drawing

AI summary

A memory device includes a level shifting circuitry. The level shifting circuitry includes an input circuitry configured to receive an input to the level shifting circuitry in a first voltage domain. The level shifting circuitry also includes a cross-junction circuitry electrically coupled to a first node of the input circuitry comprising multiple transistors that are electrically coupled in a cross-junction. The level shifting circuitry also includes an output staging circuitry electrically coupled to a second node of the cross-junction circuitry. The output staging circuitry is configured to transmit an output in a second voltage domain. The output staging circuitry includes a transistor and voltage stress reduction circuitry configured to mitigate degradation of the transistor by reducing voltage stresses across the transistor during transitions in the level shifting circuitry.