Integrated Level Shifting Circuit for Compact Word Line Voltage Switching
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Solution Overview
Problem
Existing nonvolatile semiconductor memory apparatuses require multiple transistors for level shifting circuits, leading to increased area usage and inefficiency.
Innovation Solution
A level shifting circuit with a control unit generating select and driving control signals to enable shifting signals to a pumping voltage, using fewer transistors to achieve the same functionality, thereby reducing area usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple transistors are used for level shifting circuits to generate first and second shifting signals, then the functionality of enabling word line programming and pass voltage is achieved, but the area usage increases
Solution Approach 1:
The patent merges the first level shifter and second level shifter into a single integrated level shifter that generates both first and second shifting signals. This consolidation reduces the total transistor count from multiple separate circuits to a unified structure, thereby decreasing area usage while maintaining the functionality of generating both shifting signals for word line programming and pass voltage operations
Solution Approach 2:
The integrated level shifter is designed to perform multiple functions: it generates both the first shifting signal for program voltage transfer and the second shifting signal for pass voltage transfer. This multi-functional design eliminates the need for separate dedicated level shifters for each function, optimizing area usage while ensuring reliable operation of both programming and pass voltage operations
Data Source
AI summary
A nonvolatile semiconductor memory apparatus includes a control unit configured to generate a select signal and a driving control signal in response to a first enable signal and a second enable signal; a level shifting unit configured to enable a first shifting signal or a second shifting signal to a level of a pumping voltage in response to the select signal and the driving control signal; a first switching unit configured to apply a program voltage to a word line when the first shifting signal is enabled to the level of the pumping voltage; and a second switching unit configured to apply a pass voltage to the word line when the second shifting signal is enabled to the level of the pumping voltage.