Level Translator Circuit for Low-Voltage Driving of High-Voltage Loads
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Solution Overview
Problem
High-voltage semiconductor devices are costly, complex, and inefficient due to the need for larger integrated circuits and increased thermal dissipation, as they require separate high-voltage driving stages that are not as fast or energy-efficient as low-voltage devices.
Innovation Solution
A driving circuit using a low-voltage device to control high-voltage devices through a zener diode, PMOS transistors, and a level translator, which converts low-voltage signals into high-voltage signals, allowing low-voltage devices to drive high-voltage devices with reduced chip size and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-voltage devices are used to drive high-voltage loads, then the device can bear the required voltage, but the integrated circuit size increases, manufacturing complexity increases, and power consumption increases
Solution Approach 1:
The driving circuit is segmented into two distinct domains: a low-voltage domain for signal processing and control, and a high-voltage domain for power delivery. The low-voltage domain contains the controller and level translator, while the high-voltage domain contains the high-voltage driving stage and zener diode. This segmentation allows each domain to be optimized independently, reducing overall circuit complexity while maintaining voltage bearing capability.
Solution Approach 2:
A level translator circuit acts as an intermediary between the low-voltage control domain and the high-voltage driving domain. This intermediary converts low-voltage control signals into high-voltage drive signals, enabling the low-voltage controller to indirectly control high-voltage devices without requiring the entire circuit to operate at high voltage, thus reducing complexity.
2Reliability
If high-voltage devices are used to drive high-voltage loads, then the device can bear the required voltage, but power consumption and thermal dissipation increase
Solution Approach 1:
The circuit segments power consumption responsibilities: the low-voltage domain consumes minimal power for control signaling, while the high-voltage domain only consumes power when actually driving loads. The zener diode and resistor network efficiently manage voltage levels without excessive power dissipation, allowing the system to achieve high voltage bearing capability with reduced overall power consumption compared to traditional high-voltage throughout designs.
3Reliability
If high-voltage devices are used to drive high-voltage loads, then the device can bear the required voltage, but manufacturing costs increase
Solution Approach 1:
The segmentation strategy allows standard low-voltage integrated circuits to be used for the control domain, which are cheaper and more readily available. Only the power delivery stage requires high-voltage components, significantly reducing the proportion of expensive high-voltage devices in the overall system. This approach maintains voltage bearing capability while improving ease of manufacture and reducing costs.
Solution Approach 2:
The patent employs a zener diode and resistor network as simple, inexpensive components to achieve voltage level translation and protection. These cheap components replace the need for expensive high-voltage transistors and protection circuits throughout the entire system, reducing manufacturing costs while maintaining the necessary voltage bearing capability in the power stage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of high-voltage devices needed, decreasing chip size and area, while enabling high-speed and low-power operation of the level translator and driving stage.
Implementation Method 1
a zener diode whose cathode is connected to a high-voltage power supply voltage and whose anode is connected to a ground potential of a low-voltage domain through a resistor
Data Source
AI summary
The present invention provides a level translator circuit, a driving circuit for driving a high-voltage device and a corresponding method. The driving circuit for driving a high-voltage device comprises: a zener diode whose cathode is connected to a high-voltage power supply voltage and whose anode is connected to a ground potential of a low-voltage domain through a resistor; a high-voltage PMOS transistor whose gate is connected to an anode of the resistor, whose drain is connected to the ground potential of the low-voltage domain, and whose source is operable to supply a ground potential of a high-voltage domain; a level translator operable to convert a first signal in the low-voltage domain as received to a second signal in the high-voltage domain and output the second signal; and a low-voltage driving circuit operable to receive the second signal and adapt the second signal as a third signal which can drive the high-voltage device. The present invention allows for use of the low-voltage device to drive the high-voltage device to achieve the drive of the high-voltage device in a simple and efficient manner.