Multi-Version Library Cells for Sub-10 nm Interconnect Alignment
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Solution Overview
Problem
Conventional semiconductor fabrication processes face challenges in scaling multi-gate transistors to sub-10 nm technology nodes due to variability and limitations in aligning gate lines and interconnect lines, leading to constraints on further miniaturization and increased costs per transistor.
Innovation Solution
Implementing multi-version library cell handling by adjusting the pitch of metal interconnect lines relative to gate lines, allowing for increased density and alignment options, and using contact-over-active-gate architectures to enhance transistor density and performance without increasing footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication processes are used for scaling multi-gate transistors, then manufacturing cost is reduced and compatibility with existing infrastructure is maintained, but manufacturing precision deteriorates and variability increases at sub-10 nm nodes
Solution Approach 1:
The patent divides the standard cell library into multiple versions (first version and second version) with different interconnect line pitch configurations. This segmentation allows selective use of appropriate cell versions based on alignment requirements, thereby improving manufacturing precision at sub-10 nm nodes while managing process variability through version-specific optimization
Solution Approach 2:
The patent introduces dynamic selection between different cell library versions based on alignment conditions. The methodology dynamically adjusts which cell version is used in which region, allowing the system to adapt to varying alignment precision requirements across different areas of the integrated circuit, thus resolving the contradiction between precision and manufacturability
2Quantity of substance
If feature size is reduced to increase device density, then capacity increases, but manufacturing precision deteriorates due to process variability
Solution Approach 1:
The patent applies local quality by creating different cell versions with specific interconnect pitch characteristics suited for particular alignment conditions. Instead of uniformly scaling all features, the methodology locally optimizes cell configurations in different regions, maintaining manufacturing precision while achieving high device density through selective placement of appropriate cell versions
Solution Approach 2:
The patent changes the pitch parameter of interconnect lines in different cell versions to compensate for alignment variability at reduced dimensions. By adjusting this critical geometric parameter, the methodology maintains functional performance and density while accounting for process variability inherent in sub-10 nm fabrication
3Manufacturing precision
If interconnect line pitch is increased to improve alignment tolerance, then manufacturing precision improves, but device density deteriorates
Solution Approach 1:
The patent segments the interconnect system into multiple pitch configurations across different cell versions. This allows the design to achieve effective alignment tolerance through version selection without uniformly reducing interconnect density, as each version optimizes pitch for its specific alignment tolerance requirements while maintaining overall system density
Solution Approach 2:
The patent creates a universal cell library that encompasses multiple versions with different interconnect pitch characteristics. This multi-functional library enables the design methodology to achieve both alignment tolerance and high density by selecting and combining appropriate cell versions, rather than being constrained to a single pitch configuration
Data Source
AI summary
Multi version library cell handling and integrated circuit structures fabricated therefrom are described. In an example, an integrated circuit structure includes a plurality of gate lines parallel along a first direction of a substrate and having a pitch along a second direction orthogonal to the first direction. A first version of a cell type is over a first portion of the plurality of gate lines, the first version of the cell type including a first plurality of interconnect lines having a second pitch along the second direction, the second pitch less than the first pitch.