Package Lid Dam Structure for Thermal Interface Material Containment
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Solution Overview
Problem
Existing semiconductor packages face issues with non-uniform heat dissipation and excessive heat accumulation, particularly in regions of high circuit density, leading to potential damage and increased costs due to the use of high-thermal conductivity materials like copper.
Innovation Solution
Incorporating a dam made of epoxy material on the internal surface of the package lid to constrain thermal interface material, such as solder, within a predetermined volume between the semiconductor die and the package lid, ensuring uniform heat dissipation and preventing material flow during reflow operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high-thermal conductivity materials like copper are used for the package lid, then heat dissipation performance is improved, but manufacturing cost increases
Solution Approach 1:
The patent applies local quality by using a dam structure made of epoxy or other materials to create localized thermal management zones. The dam confines thermal interface material to specific areas, enabling effective heat dissipation at critical locations without requiring the entire package lid to be made of expensive high-thermal conductivity materials like copper.
Solution Approach 2:
The patent employs composite materials by combining epoxy dam structures with thermal interface materials and standard package lid materials. This composite approach allows the system to achieve effective thermal management through the synergistic interaction of different materials, reducing reliance on expensive copper while maintaining heat dissipation performance.
2Stability of the object's composition
If thermal interface material is allowed to flow freely during reflow, then material distribution may be flexible, but uniform heat dissipation cannot be achieved
Solution Approach 1:
The patent applies segmentation by dividing the package lid into distinct regions using dam structures. These dams create separate zones that confine thermal interface material to specific areas, ensuring uniform material distribution and consistent heat dissipation across different regions of the package without requiring complex overall structural changes.
Solution Approach 2:
The patent implements preliminary action by forming the dam structure on the package lid before applying the thermal interface material. This pre-formed structure guides and constrains the material during the reflow process, ensuring uniform distribution and preventing excessive flow before the material sets, thereby achieving consistent thermal performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dam enhances uniform heat dissipation, reduces the risk of overheating, and lowers costs by using less expensive materials for the package lid while maintaining effective heat management.
Implementation Method 1
a dam formed on the internal surface of the package lid. The dam may constrain the thermal interface material on one or more sides of the semiconductor die such that the thermal interface material may be located within a predetermined volume between the top surface of the semiconductor die and the internal surface of the package lid
Implementation Method 2
a thermal interface material layer located between a top surface of the semiconductor die and an internal surface of the package lid
Data Source
AI summary
A disclosed semiconductor device includes a package substrate, a first semiconductor die coupled to the package substrate, a package lid attached to the package substrate and covering the semiconductor die, and a thermal interface material located between a top surface of the semiconductor die and an internal surface of the package lid. The semiconductor device may further include a dam formed on the internal surface of the package lid. The dam may constrain the thermal interface material on one or more sides of the first semiconductor die such that the thermal interface material is located within a predetermined volume between the top surface of the first semiconductor die and the internal surface of the package lid during a reflow operation. The package lid may include a metallic material and the dam may include an epoxy material formed as a single continuous structure or may be formed as several disconnected structures.


