Lift Frame Absorptive Shaft for Uniform Central Heating

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Solution Overview

Problem

Existing semiconductor processing technologies face inefficiencies, high costs, and limited capacity due to long operation times, non-uniform temperature distributions, and large hardware footprints, which affect device performance and throughput.

Innovation Solution

The implementation of a lift frame with a shaft and absorptive mass in a processing chamber, where the lift frame includes a shaft with an opening, a plurality of arms, and an absorptive mass with higher absorptivity than the shaft material, along with a bias heat source oriented towards the opening to direct heat towards the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional heating methods are used in semiconductor processing chambers, then substrates can be heated for processing, but temperature non-uniformities occur across the substrate surface

Engineering Contradiction:

Improvetemperature uniformityVSAvoidfilm thickness uniformity

Core Design Contradiction:

TemperatureVSManufacturing precision

Solution Approach 1:

The patent applies local quality by introducing a bias heat source that selectively heats the central region of the substrate through the lift frame opening. This creates a non-uniform heating pattern where the center receives additional thermal energy compared to the edges, specifically addressing the temperature non-uniformity problem in conventional horizontal heating configurations.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The lift frame structure serves as an intermediary component that enables the bias heat source to deliver thermal energy to the substrate center. The opening in the lift frame acts as a conduit for heat transfer, allowing the bias heat source to indirectly heat the substrate through the lift frame structure without direct contact.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If long epitaxial deposition operations are performed to achieve uniform films, then film quality improves, but throughput and productivity decrease

Engineering Contradiction:

Improvefilm uniformityVSAvoidthroughput

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The bias heat source pre-heats the central region of the substrate before the main deposition process begins. This preliminary thermal conditioning ensures that the substrate center reaches the appropriate processing temperature earlier, allowing the deposition process to proceed more quickly while still achieving uniform film formation across the entire substrate surface.

Inventive Principle:

Principle #10Preliminary action

3Ease of manufacture

If conventional heating apparatuses are used, then substrates can be processed, but the hardware occupies large footprints in manufacturing facilities

Engineering Contradiction:

Improveprocessing capabilityVSAvoidfacility footprint

Core Design Contradiction:

Ease of manufactureVSArea of stationary object

Solution Approach 1:

The patent merges the lift frame structure with the heating system by integrating the bias heat source and its delivery mechanism directly into the lift frame opening. This combination eliminates the need for separate heating apparatuses and reduces the overall hardware footprint while maintaining full substrate processing capability.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables differential heating of substrate central regions, reduces temperature and film thickness non-uniformities, increases throughput, enhances device performance, and provides thermal control and adjustability, leading to more efficient and uniform semiconductor processing.

Implementation Method 1

The absorptive mass includes a second material having a higher absorptivity than the first material of the shaft

Methodology Applied

Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Implementation Method 2

a bias heat source oriented toward the opening formed in the shaft

Methodology Applied

Scientific EffectThermal radiation: Thermal Radiation

Implementation Method 3

The shaft includes a first material... The lift frame includes a plurality of arms extending outwardly relative to the shaft

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250038040A1Lift frames for central heating, and related processing chambers and methods

Publication Date: 2025.01.30 APPLIED MATERIALS INC

AI summary

Embodiments described herein relate to lift frames for central heating, and related processing chambers and methods. In one or more embodiments, a lift frame for positioning in a processing chamber applicable for use in semiconductor manufacturing includes a shaft. The shaft includes an opening formed in the shaft, and the shaft includes a first material. The lift frame includes a plurality of arms extending outwardly relative to the shaft, and an absorptive mass disposed in the opening of the shaft. The absorptive mass includes a second material having a higher absorptivity than the first material of the shaft.