Light Absorbing Device With Embedded Metal Nanostructures

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Solution Overview

Problem

Existing light absorbing devices face structural limitations in collecting light across a wide wavelength range due to reliance on image dipole interaction, which restricts their ability to absorb light efficiently beyond specific wavelengths.

Innovation Solution

A light absorbing device is designed with a light reflecting layer, a dielectric layer, and metal nanostructures that are partially embedded in the dielectric layer, allowing for strong coupling between Fabry-Perot resonators and localized surface plasmons to enhance light absorption across a broad spectrum.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If metal nanostructures are disposed on the surface of the semiconductor substrate to achieve light absorption, then light absorption can be achieved, but only light of a specific wavelength that indicates plasmon resonance can be absorbed and the amount of light absorbed is approximately 50% at most

Engineering Contradiction:
Improvelight absorption efficiencyVSAvoidwavelength range
Core Design Contradiction:
Use of energy by moving objectVSAdaptability or versatility

Solution Approach 1:

The invention transitions from two-dimensional surface disposal to three-dimensional embedding of metal nanostructures within the dielectric layer. This dimensional change enables the metal nanostructures to be positioned at multiple depths, creating multiple plasmon resonance modes that absorb light across a broader wavelength range, thereby resolving the contradiction between absorption efficiency and wavelength adaptability

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The metal nanostructures are nested within the dielectric layer rather than being disposed on the surface. This nesting configuration allows the metal nanostructures to be embedded at different depths, creating a hierarchical structure that supports multiple resonance modes and enables broad-spectrum light absorption while maintaining high absorption efficiency

Inventive Principle:
Principle #7Nested doll (Nesting)

2Adaptability or versatility

If a dielectric layer is formed on a thin gold film with metal nanostructures disposed thereon to create a perfect absorber, then light of a wide wavelength can be absorbed through image dipole interaction, but the thickness of the dielectric layer is required to be reduced and structural limitations exist

Engineering Contradiction:
Improvewavelength rangeVSAvoidstructural limitation
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The invention changes the parameter of metal nanostructure positioning from surface-level to embedded within the dielectric layer at controlled depths. This parameter change enables the system to achieve broad-spectrum absorption through multiple plasmon resonance modes without requiring reduced dielectric layer thickness, thereby resolving the contradiction between wavelength adaptability and structural complexity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The dielectric layer serves as an intermediary medium that enables the metal nanostructures to be embedded at optimal depths for plasmon resonance. This intermediary configuration allows the metal nanostructures to interact with light across multiple wavelengths without requiring direct contact with the substrate, reducing structural limitations while maintaining broad-spectrum absorption capability

Inventive Principle:
Principle #24Intermediary (Mediator)

3Adaptability or versatility

If the metal nanostructures are completely embedded in the dielectric layer to achieve wide wavelength absorption, then light absorption across wide wavelength range is achieved, but the metal nanostructures are not exposed to outside and structural limitations remain

Engineering Contradiction:
Improvewavelength rangeVSAvoidaccessibility
Core Design Contradiction:
Adaptability or versatilityVSEase of operation

Solution Approach 1:

The invention applies local quality by embedding metal nanostructures to different depths within the dielectric layer, creating a gradient structure where some nanostructures are partially exposed. This local variation in embedding depth enables both broad-spectrum absorption (through embedded structures) and external accessibility (through exposed structures), resolving the contradiction between wavelength adaptability and ease of operation

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables efficient light collection and absorption across a wide wavelength range, increasing the light-energy conversion efficiency and reducing structural limitations, while also allowing the device to function as a photoelectrode for applications like plasmon solar cells and photocatalytic systems.

Implementation Method 1

a light reflecting layer; a dielectric layer disposed on the light reflecting layer

Methodology Applied
Scientific EffectLight reflection: Reflection

Implementation Method 2

metal nanostructures that exhibit localized surface plasmon resonance

Methodology Applied
Scientific EffectLocalized surface plasmon resonance: Resonance

Implementation Method 3

strong coupling between Fabry-Perot resonators and localized surface plasmons

Methodology Applied
Scientific EffectFabry-Perot resonance: Resonance

Data Source

PatentUS11567249B2Light absorbing device, manufacturing method thereof, and photoelectrode
Publication Date: 2023.01.31 HOKKAIDO UNIVERSITY
  • US11567249B2 patent drawing
  • US11567249B2 patent drawing
  • US11567249B2 patent drawing

AI summary

This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.