Light Absorbing Layer for Semiconductor Via Precision

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Solution Overview

Problem

The formation of nodules in dielectric layers during the creation of conductive vias in semiconductor packages leads to defects and reduced yield rates, particularly due to light reflection issues during the photoimageable material processing.

Innovation Solution

Incorporating a light absorbing layer on the circuit layers to absorb light beams, thereby reducing reflections and preventing nodule formation, which enhances the precision and yield of conductive via structures by ensuring accurate formation of openings in the dielectric layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a photoimageable dielectric layer is used to form conductive vias, then the dielectric layer can be patterned to create holes, but light reflection during processing causes nodule formation adjacent to the sidewalls of the holes

Engineering Contradiction:
Improveprecision of conductive via formationVSAvoidnodule formation
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

A light absorbing layer is introduced as an intermediary between the circuit layer and the photoimageable dielectric layer. This intermediary layer absorbs light during photoprocessing, preventing light reflection that would otherwise cause nodule formation in the dielectric layer, thereby improving via formation precision while eliminating the harmful nodules

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention converts the harmful light reflection effect into a beneficial outcome by applying a light absorbing layer that prevents the reflection from causing nodules. The light absorption property, which might seem to reduce processing effectiveness, actually eliminates the harmful reflection and improves overall manufacturing precision

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Ease of manufacture

If conventional photoimageable materials are used without light absorption control, then the manufacturing process is simpler, but the yield rate decreases due to nodule defects

Engineering Contradiction:
Improvesimplicity of manufacturing processVSAvoidyield rate of conductive via structures
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The light absorbing layer is applied in advance to the circuit layer before forming the photoimageable dielectric layer. This preliminary action prevents nodule formation during subsequent photoprocessing, thereby improving yield rate without significantly complicating the overall manufacturing process

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of light absorbing layers significantly reduces nodule formation, improving the yield rate of conductive via structures by more than 30%, 40%, 50%, or 60%, thereby enhancing the overall semiconductor device manufacturing process.

Implementation Method 1

Incorporating a light absorbing layer on the circuit layers to absorb light beams, thereby reducing reflections and preventing nodule formation

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS10103107B1Semiconductor device and method for manufacturing the same
Publication Date: 2018.10.16 ADVANCED SEMICON ENG INC
  • US10103107B1 patent drawing
  • US10103107B1 patent drawing
  • US10103107B1 patent drawing

AI summary

A semiconductor device includes at least one base element, at least one passivation layer, at least one circuit layer and at least one light absorbing layer. The base element includes at least one conductive pad. The passivation layer is disposed on the base element. The circuit layer is electrically connected to the conductive pad and disposed in the passivation layer. The light absorbing layer is disposed on the circuit layer.