Light-Blocking TFT Structure for Higher Display Opening Rate
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Electronic devices with high resolution are prone to reduced opening rates due to factors such as process variations and ambient light affecting the channel area, leading to issues like liquid crystal disclination and poor color mixing.
Innovation Solution
Incorporating a light blocking layer that overlaps with critical components like the channel area, spacers, and wiring to satisfy specific geometric relationships, thereby blocking ambient light and stabilizing liquid crystal arrangement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional transistor structure is used, then the device structure is simple and easy to manufacture, but the opening rate is limited and cannot be enhanced
Solution Approach 1:
The transistor gate is divided into two separate gates (first gate electrode and second gate electrode) positioned at different heights. This segmentation allows independent control and optimization of each gate, enabling enhanced opening rate while maintaining manufacturability through standardized fabrication processes.
Solution Approach 2:
The patent introduces a vertical dimension to the gate structure by positioning the first gate electrode and second gate electrode at different heights above the channel. This three-dimensional gate configuration increases the effective gate control area without expanding the planar footprint, thereby enhancing the opening rate while keeping the device structure manageable.
2Object-affected harmful factors
If the light blocking layer is positioned only at the bottom, then the structure is simple, but light blocking effectiveness is insufficient
Solution Approach 1:
The light blocking layer is extended from a two-dimensional planar structure to a three-dimensional configuration by positioning it between the substrate and the channel area, and also between the first gate electrode and the channel area. This vertical extension enhances light blocking effectiveness without significantly increasing device complexity.
Solution Approach 2:
The light blocking layer is strategically positioned only where needed - between the substrate/gate electrodes and the channel area - rather than uniformly throughout the device. This localized placement provides effective light blocking while minimizing additional structural complexity and material usage.
Data Source
Figure 1
Figure 2
Figure 3
AI summary
The invention provides an electronic device (10a, 10b, 10c, 10d), including a substrate (100), a semiconductor layer (200), a light blocking layer (300a, 300b, 300c, 300d), and a spacer (400). The semiconductor layer (200) is disposed on the substrate (100) and has a channel area (CH). The light blocking layer (300a, 300b, 300c, 300d) is disposed between the substrate (100) and the channel area (CH). The spacer (400) is disposed on the semiconductor layer (200). The light blocking layer (300a, 300b, 300c, 300d) overlaps with the spacer (400) and the channel area (CH). The electronic device (10a, 10b, 10c, 10d) of the embodiment of the invention may have an enhanced opening rate.