Light-Emitting Chip 2P2N Electrode Layout for Current Spreading
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Solution Overview
Problem
Conventional light-emitting chips face issues with high current density leading to local heat accumulation and brightness reduction due to inefficient current distribution and thermal management, particularly in semiconductor materials with low carrier mobility.
Innovation Solution
The design incorporates a light-emitting chip with a 2P2N electrode layout, where two P-type electrodes and two N-type electrodes are spaced apart by different distances to optimize current distribution, reducing heat accumulation and improving brightness, using an electrically insulating substrate and metal or doped semiconductor interconnection layers for enhanced lateral current spreading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high current density is applied to achieve high brightness, then output power is improved, but local heat accumulation occurs and brightness is reduced
Solution Approach 1:
The patent divides the electrode structure into multiple segments (multiple anodes and cathodes instead of single electrodes) to distribute the current injection points across the semiconductor stack. This segmentation allows the total current to be spread over multiple contact areas, reducing current density at each individual contact point and thereby reducing local heat accumulation while maintaining high total output power
Solution Approach 2:
The patent implements asymmetric electrode spacing where the distance between electrodes of the same type varies (first distance between adjacent anodes differs from second distance between adjacent cathodes). This creates non-uniform current distribution patterns that optimize heat dissipation in different regions of the chip, addressing local quality variations in thermal management
2Device complexity
If conventional 1P1N electrode layout is used, then device complexity is low, but current distribution is inefficient
Solution Approach 1:
The patent transitions from a single positive and single negative electrode (1P1N) configuration to a multi-positive and multi-negative electrode (e.g., 2P2N) configuration. This segmentation of electrodes enables better current distribution across the semiconductor stack, improving productivity in terms of current utilization efficiency while maintaining relatively simple device structure
Solution Approach 2:
The patent employs asymmetric spacing between electrodes of the same polarity, where the first distance between adjacent anodes is different from the second distance between adjacent cathodes. This asymmetric design optimizes current flow paths and distribution uniformity, enhancing current distribution efficiency without significantly increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in improved photoelectric efficiency, reduced forward voltage, increased output power, and better heat distribution, enhancing the reliability of the light-emitting chip under high current conditions.
Implementation Method 1
a photoelectric active layer 133 disposed between the first conductivity type semiconductor layer 131 and the second conductivity type semiconductor layer 132
Data Source
AI summary
A light-emitting chip includes a light-emitting unit, first and second electrode units. The light-emitting unit includes first and second conductivity type semiconductor layers and an active layer. The first electrode unit includes two first electrodes which are spaced apart from each other by a first distance, and which are electrically connected to the first conductivity type semiconductor layer. The second electrode unit includes two second electrodes electrically connected to the second conductivity type semiconductor layer. The first and second electrode units are spaced apart from each other by a second distance, and the first distance is greater than the second distance.