Light Detector Segmentation for Crosstalk Noise Reduction
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Solution Overview
Problem
Current light detectors face challenges in reducing noise, particularly crosstalk noise and jitter, due to secondary photons generated at the p-n junction, which affect sensitivity and accuracy in detecting incident light.
Innovation Solution
The light detector design incorporates a p-type semiconductor layer, n-type semiconductor regions, insulating parts, and an intermediate semiconductor part, arranged in a specific configuration to suppress crosstalk noise and enhance sensitivity, with a quenching part to manage avalanche breakdown and improve signal detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a conventional light detector structure is used, then the device is simple to manufacture, but crosstalk noise and jitter increase due to secondary photons generated at the p-n junction
Solution Approach 1:
The detector structure is segmented into multiple functional regions including a first semiconductor region, a second semiconductor region, an insulating part, and an intermediate part. This segmentation isolates the avalanche breakdown region from the light detection region, preventing secondary photons generated during avalanche breakdown from reaching the detection region and causing crosstalk noise.
Solution Approach 2:
An intermediate part is introduced between the insulating part and the second semiconductor region. This intermediate structure acts as a mediator that further isolates the avalanche breakdown region from the detection region, effectively blocking secondary photons from causing crosstalk while maintaining the electrical functionality of the detector.
2Measurement precision
If the detector structure is simplified, then manufacturing is easier, but light-receiving sensitivity decreases
Solution Approach 1:
Different regions of the detector are assigned different doping types and concentrations to optimize local functions. The first semiconductor region has one conductivity type while the second semiconductor region has the opposite conductivity type, creating localized electric fields that enhance light-receiving sensitivity in the detection region while confining avalanche breakdown to a separate region.
Solution Approach 2:
The detector structure extends in multiple dimensions with the insulating part and intermediate part arranged in specific spatial relationships. This multi-dimensional arrangement creates distinct functional zones that simultaneously achieve high light-receiving sensitivity and effective noise suppression without requiring excessive structural complexity.
3Measurement precision
If insulating parts are added around elements, then crosstalk noise is reduced, but device complexity increases
Solution Approach 1:
The insulating part is merged with the intermediate part and the semiconductor regions to form an integrated structure. This merging approach combines multiple functional elements into a unified design that achieves both noise reduction and detection accuracy improvement without proportionally increasing device complexity.
Solution Approach 2:
The detector employs a composite structure combining semiconductor materials with different conductivity types and insulating materials. This composite approach creates distinct functional regions that work together to suppress crosstalk noise while maintaining high detection accuracy, achieving performance benefits that outweigh the increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces noise and increases light-receiving sensitivity by minimizing crosstalk and jitter, allowing for more accurate detection of incident light and improved performance in light detection systems, such as lidar devices.
Implementation Method 1
secondary photons generated at the p-n junction
Implementation Method 2
detects light incident on a semiconductor region
Data Source
AI summary
According to one embodiment, a light detector includes a plurality of elements, a plurality of insulating parts, and an intermediate part. The plurality of elements are arranged along a first direction and a second direction. The first direction and the second direction cross each other. Each of the plurality of elements includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of a first conductivity type. The second semiconductor region is located around the first semiconductor region in a first plane. The first plane is along the first and second directions. The second semiconductor region is of a second conductivity type. The plurality of insulating parts are located respectively around the plurality of elements in the first plane. The intermediate part is located around the plurality of insulating parts in the first plane. The intermediate part includes a semiconductor.