Light-Emitting Die Edge Coupling in 3D Semiconductor Packaging

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Solution Overview

Problem

Integration of multiple semiconductor devices in wafer-level packaging poses challenges due to complex manufacturing processes and the need for efficient testing and verification methods to increase yield and reduce costs.

Innovation Solution

The development of a semiconductor device manufacturing process involving a semiconductor-on-insulator substrate with patterned front semiconductor layers, through semiconductor vias, and hybrid bonding techniques, along with testing structures and methodologies to facilitate verification and integration of semiconductor dies and light-emitting dies within a 3D packaging structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If wafer-level packaging is used to integrate multiple semiconductor devices, then productivity and integration density are improved, but manufacturing process complexity increases

Engineering Contradiction:
Improveintegration densityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent divides the semiconductor manufacturing process into distinct modules: forming test structures on separate test regions, performing verification testing independently, and then proceeding to final device fabrication. This segmentation allows complex wafer-level packaging to be managed through systematic, staged processes rather than monolithic operations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements preliminary verification testing on test structures before committing to full-scale device fabrication. By forming test structures first and performing yield verification, the process identifies and resolves manufacturing issues early, preventing complications during final device production and reducing overall process complexity.

Inventive Principle:
Principle #10Preliminary action

2Adaptability or versatility

If complex manufacturing processes are used for integrating multiple devices, then integration capability is improved, but yield and cost efficiency deteriorate

Engineering Contradiction:
Improveintegration capabilityVSAvoidyield
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent incorporates feedback loops where verification testing results from test structures directly inform adjustments to manufacturing parameters before final device fabrication. This feedback mechanism ensures that process variations are corrected early, maintaining high yield while enabling complex multi-device integration.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

By performing preliminary verification testing on sacrificial test structures, the process identifies yield-affecting issues before final device fabrication. This preliminary action allows optimization of manufacturing parameters, ensuring high yield when producing the actual integrated devices with enhanced integration capability.

Inventive Principle:
Principle #10Preliminary action

3Measurement precision

If traditional testing methods are used for verifying semiconductor devices, then measurement simplicity is maintained, but detection precision and yield verification capability deteriorate

Engineering Contradiction:
Improveverification precisionVSAvoidtesting structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent creates localized test structures with specific properties tailored for verification purposes. These test structures are designed with particular geometries and configurations that make them sensitive to specific manufacturing defects, providing precise detection capability without requiring complex testing equipment or procedures.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses simplified test structures that replicate key features of the final devices but are easier to fabricate and test. These sacrificial test structures serve as proxies for verifying manufacturing processes, providing high detection precision while maintaining relative simplicity in both structure and testing methodology.

Inventive Principle:
Principle #26Copying

4Adaptability or versatility

If additional optics and complex assembly steps are used, then device functionality is improved, but manufacturing simplicity and cost efficiency deteriorate

Engineering Contradiction:
Improvedevice functionalityVSAvoidmanufacturing simplicity
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent integrates multiple device functions directly into the semiconductor substrate through monolithic fabrication techniques. By combining what would traditionally require separate optical components and assembly steps into a single integrated structure, the patent maintains enhanced device functionality while dramatically simplifying the manufacturing process and eliminating the need for additional optics.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20240387493A1Method of forming semiconductor device
Publication Date: 2024.11.21 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240387493A1 patent drawing
  • US20240387493A1 patent drawing
  • US20240387493A1 patent drawing

AI summary

Semiconductor device includes light-emitting die and semiconductor package. Light emitting die includes substrate and first conductive pad. Substrate has emission region located at side surface. First conductive pad is located at bottom surface of substrate. Semiconductor package includes semiconductor-on-insulator substrate, interconnection structure, second conductive pad, and through semiconductor via. Semiconductor-on-insulator substrate has linear waveguide formed therein. Interconnection structure is disposed on semiconductor-on-insulator substrate. Edge coupler is embedded within interconnection structure and is connected to linear waveguide. Semiconductor-on-insulator substrate and interconnection structure include recess in which light-emitting die is disposed. Edge coupler is located close to sidewall of recess. Second conductive pad is located at bottom of recess. Through semiconductor via extends across semiconductor-on-insulator substrate to contact second conductive pad. First conductive pad is connected to through semiconductor via. Emission region directly faces sidewall of recess where edge coupler is located.