Light Emitting Element Arrays With Dense Aperture Growth Spacing
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Solution Overview
Problem
Existing methods for producing arrays of light emitting elements face challenges such as parasitic growth, which leads to issues like leakage current, shorting, and unsuitable wavelength emission. This parasitic growth occurs due to material deposition on the mask outside of the apertures, requiring complex etching processes that are not always perfect.
Innovation Solution
The method involves minimizing the area of the selective area mask by reducing the distance between adjacent apertures, thereby reducing parasitic growth. This is achieved by growing structures into apertures with a first distance, and then processing only certain structures into light emitting elements with a greater second distance between them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the distance between adjacent apertures in the mask is reduced to minimize mask area, then parasitic growth is reduced, but the manufacturing precision required to maintain aperture spacing increases
Solution Approach 1:
The process is segmented into two distinct stages: first growing structures at high density (small aperture spacing) to minimize parasitic growth, then selectively processing only certain structures into final light emitting elements. This segmentation allows the mask to serve its primary function of preventing parasitic growth without requiring precise final positioning, as the selection and spacing of final elements is determined in a subsequent processing stage rather than during the growth stage.
2Reliability
If complex etching processes are used to remove parasitic growth, then leakage current and shorting are reduced, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The mask is applied beforehand to the growth substrate before the epitaxial growth process begins. This preliminary action ensures that parasitic growth is prevented at the source during the growth stage itself, rather than requiring complex removal processes afterward. The mask remains in place during growth to physically block material deposition on areas where parasitic growth would occur.
Solution Approach 2:
The patent converts the potential harm of mask material interfering with light emission into a benefit by strategically positioning the mask only where needed to prevent parasitic growth, while leaving aperture regions clear for structure formation. The mask's presence during growth actually benefits the process by enabling higher structure density without increasing parasitic growth, and the mask is subsequently removed without requiring complex etching of the grown structures.
3Productivity
If all structures grown into apertures are processed into light emitting elements, then productivity is maximized, but the ability to control element spacing and configuration is reduced
Solution Approach 1:
The processing is segmented into two phases: first, all structures grown into apertures are initially formed (maintaining high productivity), then in a subsequent selective processing phase, only certain structures are chosen to become final light emitting elements while others are removed or left unprocessed. This allows the final array to have controlled spacing and configuration patterns that differ from the original aperture pattern, providing adaptability without sacrificing the initial production efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces parasitic growth, minimizing issues like leakage current and shorting, while allowing for precise control over the spacing and configuration of light emitting elements, enhancing the quality and performance of the array.
Implementation Method 1
Semiconductor layers can be applied onto the growth surface, for example by epitaxial growth
Implementation Method 2
This parasitic growth occurs due to material deposition on the mask outside of the apertures
Data Source
AI summary
In an embodiment a method for producing an array of light emitting elements includes providing a growth substrate, applying a mask having a plurality of apertures to the growth substrate, growing structures into the apertures and processing at least some of the structures into light emitting elements, wherein adjacent apertures are arranged at a first distance to each other, wherein adjacent light emitting elements are arranged at a second distance to each other, wherein the second distance is greater than the first distance, wherein at least some of the structures are reduced in an area and the reduced structures are processed into light emitting elements, and wherein the structures are reduced in area by material removal.