Light Emitting Element Orientation for Dielectrophoretic Alignment
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Solution Overview
Problem
Current light emitting elements face challenges in achieving high dielectric anisotropy and efficient alignment between electrodes, particularly in high-temperature environments and with low blue light efficiency, due to limitations in materials and manufacturing processes.
Innovation Solution
A light emitting element is developed with an element orienter bonded to its outer surface, which forms an intra-molecular dipole, increasing dielectric anisotropy and improving dielectrophoretic reactivity, thereby enhancing the alignment of light emitting elements between electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an element orienter is bonded to the outer surface of the light emitting element, then dielectric anisotropy is increased and alignment degree is improved, but device complexity is increased
Solution Approach 1:
The element orienter is bonded to the outer surface of the light emitting element in advance, before the alignment process. This preliminary action prepares the element with the necessary dielectric anisotropy and molecular dipole orientation, enabling improved alignment degree during subsequent manufacturing steps without requiring complex real-time control mechanisms.
Solution Approach 2:
The element orienter acts as an intermediary layer between the light emitting element and the external electric field. It mediates the interaction by providing a surface with specific dielectric properties that enhance the response to electric field alignment, thereby improving alignment degree without directly modifying the light emitting element's core structure.
2Reliability
If inorganic material is used as fluorescent material, then durability in high-temperature environment and blue light efficiency are improved, but manufacturing complexity is increased due to transfer method requirements
Solution Approach 1:
The patent replaces complex mechanical transfer methods with a dielectrophoresis-based alignment approach. By using electric fields to align and position the light emitting elements, the manufacturing process avoids complex mechanical handling and transfer operations, thereby reducing manufacturing process complexity while maintaining the use of durable inorganic materials.
Solution Approach 2:
The patent utilizes changes in dielectric parameters and electric field conditions to achieve precise control over light emitting element positioning and alignment. By adjusting electric field parameters rather than relying on complex mechanical transfer mechanisms, the manufacturing process is simplified while maintaining high durability standards for inorganic fluorescent materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased dielectric anisotropy and improved alignment lead to improved light emitting element performance, including enhanced blue light efficiency and durability in high-temperature environments, resulting in more reliable and efficient display devices.
Implementation Method 1
an element orienter capable of forming an intra-molecular dipole is bonded to an outer surface... increasing dielectric anisotropy
Implementation Method 2
dielectrophoretic reactivity is improved by bonding the element orienter to increase dielectric anisotropy, and the alignment degree of light emitting elements arranged between electrodes is increased
Data Source
AI summary
A light emitting device, a display device comprising same, and a method for manufacturing a display device are provided. The light emitting device comprises: a first conductivity type semiconductor doped to have a first polarity, an active layer on the first conductivity type semiconductor, a second conductivity type semiconductor on the active layer and doped to have a second polarity different from the first polarity and an insulating material layer surrounding side surfaces of the first conductivity type semiconductor, the second conductivity type semiconductor, and the active layer, wherein the insulating material layer includes an insulating material film and an element orienter bonded to an outer peripheral surface of the insulating material film.