Semiconductor Light Element Etching for Flat Emitting End Faces
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Solution Overview
Problem
The existing methods for manufacturing semiconductor light elements are complicated and time-consuming due to separate steps for forming the emitting end face and heat dissipation structure, leading to prolonged lead times.
Innovation Solution
A method where the emitting end face and heat dissipation structure are formed simultaneously through etching, using dry etching with a gas containing carbon, to create a flat surface with controlled refractive index transitions, reducing light loss and increasing coupling efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate steps are used for forming the emitting end face and heat dissipation structure, then each structure can be formed with appropriate precision, but the manufacturing process becomes complicated and time-consuming
Solution Approach 1:
The patent combines the formation of the emitting end face and heat dissipation structure into a single simultaneous etching step. The etching process is performed at multiple locations (facing the tip end of the waveguide and spaced apart from the waveguide) in one operation, merging two previously separate manufacturing steps into one unified process that reduces complexity while maintaining precision
Solution Approach 2:
The patent segments the etching process into multiple spatial zones within a single manufacturing step. By performing etching at different locations (emitting end face area and heat dissipation structure area) simultaneously in one process step, the method divides the work spatially while maintaining process unity, thereby reducing overall process complexity
2Manufacturing precision
If separate steps are used for forming the emitting end face and heat dissipation structure, then each structure can be optimized independently, but the lead time is prolonged
Solution Approach 1:
The patent merges the formation of the emitting end face and heat dissipation structure into one simultaneous etching operation. This consolidation eliminates the sequential waiting time between separate steps while maintaining the ability to optimize both structures appropriately, thereby significantly reducing manufacturing lead time
Solution Approach 2:
The patent implements continuous useful action by performing etching at multiple locations simultaneously in a single uninterrupted process step. Instead of completing one structure then moving to the next, the system continuously processes both the emitting end face and heat dissipation structure areas in parallel, maximizing productivity and reducing lead time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly shortens the manufacturing lead time and enhances coupling efficiency by forming a flat emitting end face and efficient heat dissipation structure, while minimizing light loss and maintaining high performance.
Implementation Method 1
The etching in the forming the emitting end face and the etching in the forming the heat dissipation structure are performed simultaneously
Implementation Method 2
providing a metal layer extending between the portion etched in the etching and the semiconductor element
Data Source
AI summary
A method of manufacturing a semiconductor light element is a method of manufacturing a semiconductor light element including a substrate having a first layer, a second layer, and a third layer stacked in this order, and a semiconductor element having an optical gain. The third layer is provided with a waveguide. The method includes bonding the semiconductor element to the waveguide in the third layer, providing an insulating film covering the substrate and the semiconductor element bonded to the waveguide, forming an emitting end face facing a tip end of the waveguide, and forming a heat dissipation structure provided at a position spaced apart from the waveguide. The forming the emitting end face includes etching a portion of the second layer and the insulating film, the portion facing the tip end of the waveguide.