Light Emitting Element Active-Layer Layout Against Etching Damage
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Solution Overview
Problem
Existing display devices face challenges in preventing light distortion and minimizing the impact of etching processes on the active area of light emitting elements.
Innovation Solution
A light emitting element design with a first and second semiconductor layer and an active layer having distinct well layers, where the second active area is spaced apart from the semiconductor layers to reduce etching damage, and a manufacturing method involving controlled etching to form a pillar-shaped structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the second active area is positioned closer to the second semiconductor layer to improve light emission efficiency, then the light emission efficiency is improved, but the active area becomes more susceptible to damage from the etching process
Solution Approach 1:
The patent applies parameter changes by optimizing the distance parameter between the second active area and the second semiconductor layer. Specifically, the distance is set to be 0.05 μm to 0.15 μm, which balances the competing requirements of maintaining high light emission efficiency while ensuring sufficient protection from etching damage. This quantitative parameter optimization resolves the contradiction by finding the optimal value range that satisfies both conditions.
2Manufacturing precision
If the etching process is performed more aggressively to improve manufacturing precision of the pillar shape, then the manufacturing precision is improved, but the damage to the active area increases
Solution Approach 1:
The patent applies preliminary action by pre-positioning the second active area at an optimized distance from the second semiconductor layer before the etching process begins. This advance positioning ensures that when the etching process is subsequently performed to create the pillar shape, the active area is already in a position that minimizes etching damage while maintaining manufacturing precision. The spatial arrangement is established beforehand to protect against the harmful effects of the subsequent etching step.
3Device complexity
If the first well layer and second well layer are positioned closer together to reduce device complexity, then the device complexity is reduced, but the light distortion increases
Solution Approach 1:
The patent applies local quality by creating distinct functional zones within the active layer. The first well layer and second well layer are positioned at different locations with different compositions - the first well layer contains a first composition and the second well layer contains a second composition. This local differentiation allows each layer to perform its specific function (emitting light at different wavelengths) while maintaining overall structural simplicity. The spatial separation of these functionally distinct layers prevents light distortion while avoiding excessive device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces light distortion and minimizes etching damage, enhancing the efficiency and longevity of the light emitting elements in display devices.
Implementation Method 1
the first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap... Light having a first wavelength may be emitted in the first active area, and light having a second wavelength greater than the first wavelength may be emitted in the second active area
Data Source
AI summary
A light emitting element includes: a first semiconductor layer including a semiconductor of a first type; a second semiconductor layer including a semiconductor of a second type different from the first type; and an active layer between the first and second semiconductor layers, the active layer including a first active area including a first well layer, and a second active area including a second well layer. The first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap. At least a portion of the first active area is between the second active area and the second semiconductor layer. A distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first and second semiconductor layers.