Light-Emitting Element Region Etching With Oversized Masks
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Solution Overview
Problem
Conventional methods for manufacturing light-emitting elements often result in a significant mismatch between the designed and obtained light-emitting element regions due to the etching of relatively thick semiconductor structures.
Innovation Solution
The method involves forming first masks with an area greater than the light-emitting element regions on a semiconductor structure, allowing for the exposure of the substrate while removing portions of the semiconductor structure not covered by the masks, which reduces the mismatch by ensuring the masks substantially overlap the intended regions during etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a relatively thick semiconductor structure is etched using conventional resist masks, then the etching process can be completed, but a large mismatch occurs between the designed light-emitting element region shape and the obtained region shape
Solution Approach 1:
The patent applies preliminary action by forming a preliminary mask layer with a pattern larger than the target light-emitting element region before etching. This preliminary mask compensates for the etching process effects, ensuring that after etching the semiconductor structure, the final light-emitting element region matches the desired shape accurately. The preliminary mask is formed at an appropriate thickness to account for the etching depth and lateral etching effects.
Solution Approach 2:
The patent changes the parameter of mask area from equal to target region to larger than target region. By adjusting the mask area parameter to be greater than the desired light-emitting element region area, the method compensates for the lateral etching that occurs during semiconductor structure removal, thereby maintaining shape accuracy despite the aggressive etching of thick structures.
2Ease of manufacture
If resist masks are used to cover portions of the semiconductor structure during etching, then the etching process can be controlled, but the mask area must be precisely matched to the target region which increases process difficulty
Solution Approach 1:
The preliminary mask layer is formed with intentional oversizing to preemptively compensate for etching effects. This approach simplifies the manufacturing process by eliminating the need for extremely precise mask alignment, as the mask is deliberately made larger than the target region to account for expected etching variations.
Solution Approach 2:
The patent applies beforehand cushioning by creating a mask layer with excess area that serves as a buffer against etching process variations. This cushioning layer ensures that even if etching conditions vary, the final light-emitting element region will still match the desired shape, as the extra mask material compensates for lateral etching and process tolerances.
Data Source
AI summary
A method of manufacturing a light-emitting element includes: preparing a wafer including a substrate, and a semiconductor structure disposed on the substrate; and forming a plurality of light-emitting element regions by dividing the semiconductor structure. The forming of the plurality of light-emitting element regions includes: forming a plurality of first masks on the semiconductor structure such that each of the plurality of first masks covers a respective first region where one of the plurality of light-emitting element regions is to be formed, and each of the plurality of first masks has an area greater than an area of the respective first region in a plan view, and exposing the substrate through the semiconductor structure by removing a portion of the semiconductor structure that is not covered by the plurality of first masks.