Light Emitting Element Well-Layer Holes for Leakage Suppression
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Solution Overview
Problem
Existing light emitting elements face reliability issues due to significant luminance changes, primarily caused by leakage currents resulting from electron movement along the edges of the well layer, which degrade the external quantum efficiency and overall performance.
Innovation Solution
The light emitting element incorporates a well layer with etching holes that penetrate in a specific direction, blocking current paths towards the edge and reducing leakage currents, while the manufacturing method involves sequential formation of semiconductor layers and barrier layers using Metal Organic Chemical Vapor Deposition (MOCVD), with indium composition ratios optimized to minimize luminance changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional well layer structure is used, then the manufacturing process is simple, but leakage currents occur due to electron movement along edges, reducing reliability
Solution Approach 1:
The well layer is segmented by forming holes that divide the continuous well layer into isolated regions. This segmentation blocks the electron movement paths along the edges, preventing leakage currents while maintaining the light-emitting function of the well layer.
Solution Approach 2:
The well layer is transformed into a porous structure by forming holes within it. These holes act as barriers to electron flow along the edges, reducing leakage currents. The porous structure maintains the light-emitting capability while introducing pathways that disrupt harmful electron movement.
2Reliability
If the well layer is etched to form holes, then leakage currents are reduced, but the manufacturing precision requirements increase
Solution Approach 1:
The holes are formed in the well layer before the formation of subsequent barrier layers. This preliminary action allows the holes to be created when the well layer is accessible, and subsequent layers are then formed around these pre-existing holes, simplifying the overall manufacturing process while achieving the desired leakage current suppression.
Solution Approach 2:
The holes are selectively formed in specific regions of the well layer where leakage currents are most problematic. By concentrating the hole formation in critical areas rather than uniformly throughout the entire well layer, the manufacturing precision requirements are reduced while still achieving effective leakage current suppression.
3Reliability
If indium composition ratio is optimized, then luminance stability improves, but the complexity of composition control increases
Solution Approach 1:
The indium composition ratio in the well layer is optimized to specific ranges to achieve the desired balance between light-emitting efficiency and leakage current suppression. By controlling the indium composition parameter within defined limits, luminance stability is improved while maintaining manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses leakage currents, enhances external quantum efficiency, and stabilizes luminance, thereby improving the reliability and performance of the light emitting element.
Implementation Method 1
leakage currents resulting from electron movement along the edges of the well layer
Implementation Method 2
sequential formation of semiconductor layers and barrier layers using Metal Organic Chemical Vapor Deposition (MOCVD)
Data Source
AI summary
A light emitting element includes: a first semiconductor layer; an active layer provided on the first semiconductor layer; a second semiconductor layer provided on the active layer; and an insulative film around at least a portion of the first semiconductor layer, the active layer, and the second semiconductor layer, which are sequentially provided in a first direction. The active layer may include a first barrier layer, a first well layer, and a second barrier layer, which are sequentially provided in the first direction, and the first well layer may include first holes penetrating the first well layer.