Light Emitting Element Electrode Layout for Over-Etch Protection

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Solution Overview

Problem

In the manufacturing process of light emitting elements, over-etching of the element insulating film can expose the side surface of the second semiconductor layer adjacent to the element electrode layer, leading to potential damage and reduced luminous efficiency.

Innovation Solution

The area of the element electrode layer is made smaller than the second semiconductor layer, with the element insulating film having an inclined outer peripheral surface to prevent exposure of the second semiconductor layer during over-etching, and the insulating film completely exposes the element electrode layer surface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the element insulating film is over-etched to expose the element electrode layer, then the element electrode layer can be fully exposed for proper electrical connection, but the side surface of the second semiconductor layer may be exposed leading to damage and reduced luminous efficiency

Engineering Contradiction:

Improveexposure precision of element electrode layerVSAvoidintegrity of second semiconductor layer

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The element electrode layer is designed with a larger area than the second semiconductor layer in advance, creating a protective overhang structure before etching occurs. This preliminary geometric configuration ensures that during the etching process, the electrode layer extends beyond the semiconductor layer boundaries, preventing exposure of the semiconductor side surface even when over-etching occurs.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The element insulating film is configured with an inclined outer peripheral surface that slopes downward from the electrode layer toward the semiconductor layer. This inclined structure acts as a cushioning barrier, allowing the insulating film to be over-etched while the inclination geometry prevents the etch from reaching the semiconductor layer side surface, thus protecting it in advance.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

2Area of stationary object

If the element electrode layer area is made larger than the second semiconductor layer, then the insulating film can completely expose the electrode layer, but the side surface of the second semiconductor layer may be exposed during over-etching

Engineering Contradiction:

Improvearea of element electrode layerVSAvoidexposure of second semiconductor layer side surface

Core Design Contradiction:

Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

The patent employs asymmetric configuration where the element electrode layer has a larger area than the second semiconductor layer, creating an asymmetric overhang structure. This asymmetry is strategically designed so that the electrode layer extends beyond the semiconductor layer only in regions where it provides protective coverage, while the insulating film's inclined surface creates a asymmetric buffer zone that prevents harmful exposure.

Inventive Principle:

Principle #4Asymmetry

Solution Approach 2:

The insulating film is designed with an inclined outer peripheral surface that introduces a dimensional gradient. Instead of a vertical or flat configuration, the inclined surface adds a slope dimension that creates a gradual transition zone. This dimensional change allows the insulating film to extend further in the horizontal direction while maintaining protective coverage, enabling complete exposure of the electrode layer without exposing the semiconductor side surface during over-etching.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS12520632B2Light emitting element and display device including the same

Publication Date: 2026.01.06 SAMSUNG DISPLAY CO LTD

AI summary

A light emitting element includes a light emitting element core extending in a direction and including first and second semiconductor layers and an element active layer disposed between the first and second semiconductor layers. The light emitting element includes an element electrode layer on the second semiconductor layer of the light emitting element core, and an element insulating film surrounding a side surface of the light emitting element core and a side surface of the element electrode layer. The element electrode layer overlaps the second semiconductor layer in the direction the light emitting element core extends, an area of the element electrode layer in plan view is smaller than an area of the second semiconductor layer in plan view, and the element insulating film completely exposes a surface of the element electrode layer, the surface being opposite to another surface of the element electrode layer facing the second semiconductor layer.