Light Emitting Element Insulating Film for Fast, Low-Afterimage Pixels
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Solution Overview
Problem
Display devices experience afterimages and response delays due to surface defects in semiconductor layers and active layers, particularly in small-diameter light emitting elements.
Innovation Solution
A light emitting element with a specific insulating film structure surrounding the semiconductor layers and an active layer, comprising multiple layers of materials such as zirconium oxide, hafnium oxide, and aluminum nitride, formed through a sol-gel process to minimize surface defects and enhance electrical and optical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If a small diameter light emitting element is used, then the display device can achieve higher resolution and smaller pixel size, but surface defects in semiconductor layers and active layers cause afterimages and response delays
Solution Approach 1:
The patent applies local quality by creating a multi-layer insulating film structure with different materials (silicon oxide, silicon nitride, aluminum nitride) and thicknesses that are specifically tailored to address surface defects at the semiconductor layer interface. Each layer provides localized protection and defect passivation where it is most needed, rather than using a uniform structure throughout.
Solution Approach 2:
The patent employs composite materials by combining multiple insulating film materials (silicon oxide, silicon nitride, aluminum nitride) in a stacked configuration. This composite structure leverages the complementary properties of each material to effectively passivate surface defects while maintaining electrical insulation, resolving the contradiction between small size and reliability.
2Area of moving object
If a small diameter light emitting element is used, then the display device can achieve higher resolution, but response time increases due to surface defects
Solution Approach 1:
The multi-layer insulating film structure provides localized defect passivation at the semiconductor layer interface, reducing carrier trapping and recombination at defect sites. This local improvement in quality directly reduces response time by eliminating delay caused by surface defects, while maintaining the small pixel size benefit.
Solution Approach 2:
The insulating film structure is formed in advance during the manufacturing process, before the light emitting element is operated. This preliminary action of defect passivation ensures that surface defects are addressed before they can cause response delays during device operation, enabling fast response times from the outset.
3Reliability
If a multi-layer insulating film structure is added, then surface defects are minimized and afterimages are reduced, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the insulating film into multiple functional layers, each with a specific role in defect passivation and electrical insulation. This segmented approach allows each layer to be optimized for its specific function, achieving superior afterimage reduction while maintaining a systematic and manufacturable structure.
Solution Approach 2:
The patent utilizes parameter changes by varying the material composition and thickness of each insulating film layer to optimize defect passivation. By adjusting these parameters during manufacturing, the structure achieves high reliability without requiring overly complex designs, as the same basic multi-layer architecture can be tuned for different applications.
4Area of moving object
If the first semiconductor layer diameter is reduced to 0.5-10 μm, then display resolution is improved, but manufacturing precision requirements increase
Solution Approach 1:
The multi-layer insulating film structure provides localized protection and defect passivation at the semiconductor layer interface, which is particularly important for small-diameter elements where surface defects have a greater relative impact. This local quality improvement helps maintain manufacturing yield and precision by compensating for the increased difficulty of manufacturing small structures.
Solution Approach 2:
The composite insulating film structure provides a robust platform that can accommodate variations in semiconductor layer dimensions while maintaining performance. The multiple layers with different materials and thicknesses create a tolerant structure that helps maintain manufacturing precision even when working with small 0.5-10 μm diameter semiconductor layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The insulating film structure reduces afterimages and response delays by minimizing surface defects, allowing rapid luminance changes and improved luminous efficiency even in small-diameter elements.
Implementation Method 1
the insulating film may include a first layer surrounding the first semiconductor layer, the second semiconductor layer, and the active layer
Implementation Method 2
formed through a sol-gel process to minimize surface defects and enhance electrical and optical characteristics
Data Source
AI summary
A light emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, an active layer between the first semiconductor layer and the second semiconductor layer, an electrode layer disposed on the second semiconductor layer, and an insulating film surrounding an outer surface of at least the active layer. A diameter of the first semiconductor layer is in a range of about 0.5 μm to about 10 μm, and the insulating film includes a first layer surrounding the first semiconductor layer, the second semiconductor layer, and the active layer and a second layer disposed on the first layer and including aluminum nitride (AlN).