Light Emitting Element Electrode Structure for Short-Circuit Isolation
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Solution Overview
Problem
Existing light emitting elements face issues with short-circuit defects due to inadequate insulation, leading to electrical instability and reduced lifetime and efficiency.
Innovation Solution
A light emitting element design featuring a semiconductor layer, light emitting layer, and electrode layer with an insulative film surrounding the side surfaces, including a slope on the electrode layer's side surface to prevent short-circuit defects, ensuring electrical stability and improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulative film is applied to surround side surfaces of semiconductor layers, then electrical insulation is improved, but manufacturing complexity increases due to additional coating and drying steps
Solution Approach 1:
The substrate is pre-treated with oxygen plasma before applying the insulative film. This preliminary action activates the substrate surface, improving adhesion of the insulative film and reducing the need for additional surface preparation steps, thereby managing manufacturing complexity while ensuring reliable electrical insulation.
Solution Approach 2:
The insulative film's properties are optimized by controlling deposition parameters and thermal processing conditions. The film thickness and composition are adjusted to achieve adequate electrical insulation with minimal process steps, balancing reliability improvement against manufacturing complexity.
2Reliability
If the electrode layer width is increased to improve electrical connection, then electrical conductivity is improved, but the risk of short-circuit defects increases
Solution Approach 1:
An insulative film is introduced as an intermediary layer between the electrode layer and surrounding structures. This mediator provides electrical isolation that prevents short-circuit defects while allowing the electrode layer to maintain adequate width for stable electrical connection, thus resolving the contradiction between connectivity and safety.
Solution Approach 2:
The insulative film is selectively applied to specific regions where short-circuit risks exist, rather than uniformly across the entire device. This localized approach provides necessary electrical isolation to prevent short-circuits while minimizing the impact on electrode layer design and maintaining electrical connection stability.
3Strength
If thermal processing is applied to improve film adhesion, then bonding strength is improved, but energy consumption increases
Solution Approach 1:
Instead of using high-temperature thermal processing, the patent employs low-temperature plasma treatment to improve film adhesion. This parameter change in the processing method achieves adequate bonding strength while significantly reducing energy consumption compared to conventional thermal annealing approaches.
Solution Approach 2:
Thermal processing is replaced with plasma-based surface treatment. This substitution uses electromagnetic field interactions rather than thermal energy to achieve film adhesion, thereby maintaining bonding strength while reducing energy consumption.
Data Source
AI summary
A light emitting element includes a first semiconductor layer, a light emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light emitting layer, an electrode layer disposed on the second semiconductor layer, and an insulative film. The insulative film surrounds side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer, and surrounds a portion of the electrode layer at a first end portion at which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer, and a second surface facing the first surface, the second surface having a width greater than a width of the first surface.