Light Emitting Element Side-Contact Structure for Reliable Display Integration
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Solution Overview
Problem
Existing light emitting elements and display devices face challenges in efficiently manufacturing and integrating light emitting diodes, particularly in ensuring accurate contact with semiconductor layers and preventing process errors during the removal of certain layers.
Innovation Solution
A light emitting element design that includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a third semiconductor layer, and an element electrode layer, with a contact electrode contacting the side surface of the second semiconductor layer to facilitate electrical connection and reduce the risk of process errors during the removal of the first semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a contact electrode is formed to contact the side surface of the second semiconductor layer, then electrical connection reliability is improved, but device structure complexity increases
Solution Approach 1:
The contact electrode contacts the side surface of the second semiconductor layer rather than the top surface, utilizing the vertical dimension for electrical connection. This side-surface contact approach provides reliable electrical connection while maintaining a compact structure without requiring additional complex interconnection layers.
Solution Approach 2:
The first insulating layer serves as an intermediary that selectively covers the first semiconductor layer while exposing the second semiconductor layer's side surface. This allows the contact electrode to reach the second semiconductor layer through the insulating layer, providing reliable electrical connection while maintaining structural organization.
2Use of energy by moving object
If the first semiconductor layer is removed to improve light extraction, then light extraction efficiency is improved, but process error risk increases
Solution Approach 1:
The contact electrode is formed to contact the side surface of the second semiconductor layer before the first semiconductor layer is removed. This preliminary action ensures that the electrical connection is already established and protected, so that when the first semiconductor layer is subsequently removed for improved light extraction, the electrical connection reliability is maintained without process errors.
3Manufacturing precision
If insulating layers are added around semiconductor layers, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The first insulating layer is selectively formed around the first semiconductor layer and partially around the second semiconductor layer, providing precise local insulation where needed. The second insulating layer is formed around the light emitting layer and third semiconductor layer. This localized insulation approach improves manufacturing precision by ensuring proper layer alignment and electrical isolation only where required, rather than adding unnecessary insulating structures throughout the entire device.
Data Source
AI summary
A light emitting element, a display device including the same, and a method of manufacturing the display device display device are provided. The light emitting element includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, a light emitting layer on the second semiconductor layer, a third semiconductor layer on the light emitting layer, an element electrode layer on the third semiconductor layer, a connection electrode on the element electrode layer, a first insulating layer around a side surfaces of the first semiconductor layer and the second semiconductor layer, a contact electrode around a side surface of the first insulating layer and the side surface of the second semiconductor layer, and a second insulating layer around the side surfaces of the second semiconductor layer, and side surfaces of the light emitting layer, the third semiconductor layer, the element electrode layer, and the connection electrode.