Light Emitting Element Sidewall Insulation for Etch-Free Active Layers
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Solution Overview
Problem
The manufacturing process of light emitting elements faces challenges in reducing defect risks and improving emission efficiency, particularly in achieving high-performance display devices with high resolution and small element sizes.
Innovation Solution
A method of manufacturing a light emitting element that involves forming a semiconductor stack member with a first and second semiconductor layer and an active layer, where the active layer is grown without a separate etching process, and an insulating layer is used to cover the side surfaces, minimizing defects and enhancing emission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a separate etching process is used to form the active layer, then the manufacturing precision can be improved, but the manufacturing complexity and defect risk increase
Solution Approach 1:
The patent extracts the etching process from the active layer formation sequence, eliminating the need for separate etching steps. The active layer is directly formed through selective growth on patterned semiconductor layers, removing the harmful etching环节 that causes defects and increases process complexity while maintaining precise dimensional control.
Solution Approach 2:
The patent performs preliminary patterning of the first and second semiconductor layers before growing the active layer. By pre-forming the semiconductor layer patterns with insulating layers, the active layer grows directly in the desired configuration without requiring subsequent etching, thus simplifying the overall process while achieving precise active layer formation.
2Measurement precision
If the element size is reduced for high resolution displays, then the display resolution is improved, but the emission efficiency deteriorates
Solution Approach 1:
The patent applies local quality by creating different structural configurations at different locations within the light emitting element. The active layer is formed with specific thickness variations and compositional gradients in different regions, allowing optimized light emission efficiency in smaller elements while maintaining high resolution through precise local structural control rather than uniform design.
Solution Approach 2:
The patent changes physical parameters of the semiconductor layers and active layer, including composition ratios, thicknesses, and crystal structures. By adjusting these parameters locally in smaller elements, the emission efficiency is maintained or improved even as element size decreases for higher display resolution.
3Manufacturing precision
If multiple separate processes are used to form semiconductor layers, then the manufacturing precision is improved, but the productivity decreases
Solution Approach 1:
The patent merges the formation of multiple semiconductor layers and the active layer into a single continuous growth process. By using selective epitaxial growth that simultaneously forms the first semiconductor layer, active layer, and second semiconductor layer in one operation, the patent achieves precise layer formation without requiring multiple separate fabrication steps, thus improving productivity while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces defect risks during manufacturing and enhances the emission efficiency of the light emitting element, enabling the production of high-performance display devices with improved resolution and smaller element sizes.
Implementation Method 1
forming an active layer and a second semiconductor layer on the first semiconductor layer
Data Source
AI summary
A method of manufacturing a light emitting element includes forming a first semiconductor layer on a substrate; patterning a first insulating layer on a side surface of the first semiconductor layer; and forming an active layer and a second semiconductor layer on the first semiconductor layer.