Semiconductor Light Emitter Structure for Bond-Free Electrode Connection
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Solution Overview
Problem
Existing semiconductor light emitting devices face challenges in achieving stable and simple electrical connections with wiring electrodes, leading to complexity and increased costs in manufacturing processes.
Innovation Solution
A semiconductor light emitting device with a semiconductor structure protruding from one surface of the conductive semiconductor layers, a metal layer stacked on the structure, and a dielectric layer on the semiconductor layer surfaces, allowing for direct electrical connection without a bonding medium, and a method involving selective growth and patterning of dielectric layers for easy integration with wiring substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a bonding process is used to ensure stable electrical connection between the semiconductor light emitting device and the wiring electrode, then the electrical connection stability is improved, but the manufacturing complexity and cost increase
Solution Approach 1:
The patent extracts and eliminates the bonding process from the manufacturing sequence by designing a structure where the semiconductor light emitting device is directly mounted on the wiring electrode through its electrode, achieving electrical connection without intermediate bonding materials or processes. This removes the bonding step while maintaining reliable electrical connection.
Solution Approach 2:
The patent merges the electrical connection function with the mounting structure itself. The electrode of the semiconductor light emitting device directly contacts the wiring electrode, combining the mechanical support and electrical connection functions into a single integrated structure, eliminating the need for separate bonding processes.
2Reliability
If a bonding process is used to ensure stable electrical connection, then the electrical connection stability is improved, but the manufacturing cost increases
Solution Approach 1:
The patent removes the bonding process and associated bonding materials from the manufacturing system, eliminating the costs related to bonding materials, bonding equipment operation, and bonding process control, while maintaining reliable electrical connection through direct contact.
Solution Approach 2:
The patent employs a simple direct-contact structure that eliminates the need for expensive bonding materials and complex bonding equipment, using instead a straightforward mounting approach that reduces manufacturing cost while achieving the required electrical connection reliability.
3Loss of energy
If the semiconductor structure protrudes from the semiconductor layer surface, then the light extraction efficiency is improved by suppressing total internal reflection, but the device structure complexity increases
Solution Approach 1:
The patent employs a protruding semiconductor structure with a curved or rounded surface that protrudes from the semiconductor layer. This curved geometry helps suppress total internal reflection by gradually changing the refractive index interface, improving light extraction efficiency while maintaining a relatively simple overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates stable and efficient electrical connections, reduces production costs, and enhances light extraction efficiency by suppressing total internal reflection, thereby simplifying the manufacturing process and improving product yield.
Implementation Method 1
enhances light extraction efficiency by suppressing total internal reflection
Data Source
AI summary
Disclosed are a semiconductor light emitting element, a display device, and a method for manufacturing a display device. A semiconductor light emitting element according to an embodiment of the present disclosure comprises: a first conductive semiconductor layer and a second conductive semiconductor layer; an active layer located between the first conductive semiconductor layer and the second conductive semiconductor layer; a semiconductor structure protruding from one surface of at least one of the first conductive semiconductor layer or the second conductive semiconductor layer; and a metal layer laminated on the outer surface of the semiconductor structure.