Multi-Layer Insulated Light-Emitting Element Against Oxygen Diffusion

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Solution Overview

Problem

Existing light-emitting elements suffer from surface defects and oxygen diffusion, leading to reduced efficiency and reliability.

Innovation Solution

A light-emitting element design featuring multiple insulating films, including an interlayer dielectric film with a high dielectric constant and thin thickness, surrounded by first and second element insulating films, to prevent surface defects and oxygen diffusion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a single insulating film is used to protect the core, then the structure is simple, but surface defects and oxygen diffusion occur reducing efficiency and reliability

Engineering Contradiction:
Improveelement reliabilityVSAvoidinsulating film structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The insulating film is divided into multiple distinct layers: an interlayer dielectric film (first insulating film) with high dielectric constant directly on the core, and element insulating films (second insulating films) surrounding the interlayer dielectric film. This segmentation allows each layer to perform specific functions - the interlayer dielectric film provides electrical isolation and suppresses surface defects, while the element insulating films provide additional protection against oxygen diffusion and environmental degradation, thereby resolving the contradiction between reliability improvement and structural complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs composite insulating film structures combining materials with different properties. The interlayer dielectric film uses materials with high dielectric constants (k≥10) such as hafnium oxide, scandium oxide, or titanium oxide to provide superior electrical isolation. The element insulating films use materials with low oxygen permeability such as silicon oxide or aluminum oxide. This composite approach leverages the complementary strengths of different materials to simultaneously address surface defect suppression and oxygen barrier requirements, improving reliability without requiring excessive structural complexity.

Inventive Principle:
Principle #40Composite materials

2Reliability

If the interlayer dielectric film is made thin to improve efficiency, then internal quantum efficiency increases, but oxygen diffusion may increase

Engineering Contradiction:
Improveinternal quantum efficiencyVSAvoidoxygen diffusion
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The element insulating films act as intermediary barrier layers between the thin interlayer dielectric film and the external environment. These films provide an additional protective interface that blocks oxygen diffusion while allowing the interlayer dielectric film to maintain its thin configuration for optimal electrical isolation and efficiency. The element insulating films mediate between the conflicting requirements of thin film design for efficiency and sufficient thickness for oxygen protection.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The element insulating films create an inert protective environment around the core structure. By using materials with extremely low oxygen permeability such as silicon oxide and aluminum oxide, these films establish an oxygen-barrier environment that protects the thin interlayer dielectric film and core from oxygen exposure, thereby maintaining internal quantum efficiency without requiring the interlayer dielectric film to be thick.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

3Ease of manufacture

If multiple element insulating films are added to prevent oxygen diffusion, then reliability improves, but manufacturing complexity increases

Engineering Contradiction:
Improveoxygen barrier performanceVSAvoidinsulating film layers
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent optimizes the thickness parameters of each insulating film layer to balance protection performance and manufacturing feasibility. The interlayer dielectric film is designed with thickness of 50-200 nm to provide adequate electrical isolation, while the element insulating films are designed with thickness of 100-500 nm to provide effective oxygen barrier properties. By carefully controlling these parameter ranges, the patent achieves superior oxygen protection without requiring excessively thick or complex multi-layer structures that would be difficult to manufacture.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design improves efficiency and reliability by minimizing surface defects and oxygen ingress, enhancing internal quantum efficiency and maintaining luminance over time.

Implementation Method 1

The interlayer dielectric film may include an oxide insulating material having a dielectric constant of about 10 or more

Methodology Applied
Scientific EffectDielectric: Dielectric

Implementation Method 2

multiple insulating films disposed directly on a side surface of a core including multiple semiconductor layers... to prevent surface defects and oxygen diffusion

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS20260052809A1Light-emitting element and display device including the same
Publication Date: 2026.02.19 SAMSUNG DISPLAY CO LTD
  • US20260052809A1 patent drawing
  • US20260052809A1 patent drawing
  • US20260052809A1 patent drawing

AI summary

A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.