Light Emitter Arrays Wavelength Uniformity Growth Control
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Solution Overview
Problem
Optical devices face challenges in achieving a narrow wavelength range for operating light beams due to nonuniformity in the growth profiles of light emitters across substrates, leading to variations in the wavelengths of light emitted, which affects the quality and efficiency of the light sources.
Innovation Solution
A method is introduced to adjust growth parameters such as size, shape, and composition of light emitters based on their location on the substrate to compensate for nonuniformity in growth profiles, using techniques like molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), to reduce wavelength nonuniformity and achieve a more consistent light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If light emitters are grown uniformly across the substrate using standard deposition methods, then the manufacturing process is simple and fast, but the wavelength nonuniformity increases and the optical device quality deteriorates
Solution Approach 1:
The patent applies local quality by adjusting growth parameters (temperature, pressure, deposition rate) specifically for different regions of the substrate. Each region receives customized growth conditions based on its location, allowing compensation for nonuniform growth profiles and achieving uniform wavelength emission across the entire array of light emitters.
Solution Approach 2:
The patent implements preliminary action by pre-determining the nonuniform growth profile of the substrate before growing the light emitters. Based on this pre-characterization, growth parameters are adjusted in advance for different regions, preventing wavelength nonuniformity rather than correcting it after fabrication.
2Manufacturing precision
If growth parameters are adjusted for each light emitter to compensate for nonuniformity, then wavelength uniformity improves, but the manufacturing time and process complexity increase
Solution Approach 1:
The nonuniform growth profile is determined once for the entire substrate before the light emitter growth process. This preliminary characterization allows subsequent light emitters to be grown with pre-planned parameter adjustments, avoiding real-time adjustments and maintaining high manufacturing throughput while achieving wavelength uniformity.
Solution Approach 2:
The substrate is divided into multiple regions, each with its own optimized growth parameters. This segmentation allows parallel processing of different regions with customized parameters, maintaining overall manufacturing efficiency while achieving precise wavelength control in each segment.
3Ease of manufacture
If standard deposition methods are used without parameter adjustment, then the manufacturing process is simple, but the yield of optical devices with specific wavelengths decreases
Solution Approach 1:
The patent changes physical and chemical parameters (temperature, pressure, deposition rate, composition) during the growth process based on substrate location. These parameter changes enable consistent production of light emitters with specific wavelengths across the entire substrate, significantly improving device yield while maintaining reasonable process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the generation of light beams with a narrower wavelength range, improving the quality and efficiency of optical devices by reducing wavelength nonuniformity and enhancing the yield of optical devices that require specific wavelengths.
Implementation Method 1
The growing the given light emitter may comprise depositing the given light emitter on the substrate using one or more of molecular beam epitaxy (MBE), chemical vapor deposition (CVD), and liquid phase epitaxy (LPE).
Implementation Method 2
The growing the given light emitter may comprise depositing the given light emitter on the substrate using one or more of molecular beam epitaxy (MBE), chemical vapor deposition (CVD), and liquid phase epitaxy (LPE).
Data Source
AI summary
There are provided methods of growing arrays of light emitters on substrates. An example method includes adjusting a growth parameter of a given light emitter of an array of light emitters on a substrate to obtain an adjusted growth parameter. The adjusting may be based on a location of the given light emitter on the substrate. The adjusting may be to compensate for nonuniformity in a growth profile of the light emitters across the substrate. The nonuniformity may be associated with a corresponding nonuniformity among wavelengths of light generated by the light emitters. Adjusting the growth parameter may be to adjust the corresponding nonuniformity. The method may also include growing the given light emitter on the substrate based on the adjusted growth parameter. Arrays of corresponding light emitters are also described.


