Light-Emitting Semiconductor Structure With Reduced Contact Absorption
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Light-emitting components face efficiency losses due to absorption at electrical contacts and within semiconductor bodies, where reducing absorption losses through material selection and layer thickness can adversely affect light generation efficiency.
Innovation Solution
A semiconductor component with a carrier, semiconductor body, and intermediate layer, featuring a structured active zone with locally deactivated regions to minimize radiation absorption, where the active zone is subdivided into radiation-active and -inactive regions, and contact structures are positioned to avoid direct absorption, using III/V or II/VI compound semiconductor materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the semiconductor body is optimized for minimal absorption losses (through layer thickness and material selection), then absorption losses are reduced, but the efficiency of light generation is adversely influenced
Solution Approach 1:
The patent applies local quality by creating regions with different optical properties within the semiconductor body. Specifically, it uses transparent electrically conductive materials with different transparency characteristics in different regions, and creates transparent contact structures that are transparent to the emitted radiation wavelength, allowing different parts of the device to have optimized properties for their specific functions (current conduction vs. light emission)
Solution Approach 2:
The patent changes physical parameters such as the transparency of contact structures, the wavelength range of emitted radiation, and the electrical conductivity of different regions. By adjusting these parameters, the device achieves minimal absorption losses while maintaining high light generation efficiency through optimized material selection and structural design
2Loss of energy
If electrical contacts are coated with radiation-reflecting material (such as silver) to reduce absorption losses, then absorption losses at contacts are reduced, but the electrical conductivity may not meet requirements
Solution Approach 1:
The patent uses composite material structures for electrical contacts, combining transparent electrically conductive materials with other materials to achieve both required electrical conductivity and radiation transparency. The composite structure allows the contact to fulfill dual functions: conducting electricity efficiently and allowing emitted radiation to pass through without absorption
Solution Approach 2:
The patent introduces transparent electrically conductive materials as intermediary substances between the metal contacts and the semiconductor active region. These intermediary layers serve as mediators that maintain electrical conductivity while being transparent to the emitted radiation, thus preventing absorption losses without compromising electrical performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The component achieves increased efficiency by minimizing radiation losses through targeted deactivation of regions and strategic placement of contact structures, allowing for a predefined luminous pattern and reduced absorption, thereby enhancing overall efficiency.
Implementation Method 1
The active zone is configured for generating electromagnetic radiation for instance in the infrared, visible or in the ultraviolet spectral range
Implementation Method 2
The intermediate layer is configured for reducing losses arising from absorption of the generated radiation
Data Source
AI summary
Disclosed is method for making a component and a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer.