Light Emitting Layer Structure With High-Resistance Current Constriction
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Solution Overview
Problem
Existing light emitting devices face inefficiencies in light emission due to improper constriction of electric current, leading to decreased electric current efficiency and potential damage to the active layer.
Innovation Solution
Incorporating high resistance parts with concentrated ion-injected atoms in the conductive layers to constrict electric current flow, ensuring efficient light emission by minimizing current loss and protecting the active layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high resistance parts are formed in electrically-conductive layers to constrict electric current, then light emission efficiency is improved, but device complexity increases due to additional ion injection processes
Solution Approach 1:
The patent changes the electrical resistance parameter of the electrically-conductive layers by ion injection, creating high resistance parts with different resistance values than the surrounding regions. This parameter change enables current constriction without adding separate structural components, thus improving light emission efficiency while avoiding excessive device complexity
Solution Approach 2:
The high resistance parts act as intermediary elements that mediate the flow of electric current between the electrodes and the active layer. By introducing these intermediate high resistance regions, the patent controls current distribution to improve light emission efficiency without requiring complete redesign of the device architecture
2Productivity
If ion concentration in high resistance parts is increased to improve current constriction, then light emission efficiency improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating regions with different ion concentrations within the electrically-conductive layers. The high resistance parts have locally increased ion concentration to provide current constriction, while other regions maintain different concentration levels. This localized variation achieves efficient current control without requiring uniform high precision throughout the entire device
Solution Approach 2:
The patent implements partial action by ion injecting only specific regions of the electrically-conductive layers to form high resistance parts, rather than treating the entire structure uniformly. This selective ion injection achieves the necessary current constriction with moderate precision requirements in the injected regions, avoiding the need for extreme precision across the whole device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively constrains electric current, enhancing light emission efficiency while reducing active layer degradation, even in smaller device sizes.
Implementation Method 1
a first high resistance part that is provided in the first electrically-conductive layer and that includes first atoms... a concentration of the first atoms inside the first high resistance part is greater than a concentration of the first atoms in a first surface of the first electrically-conductive layer
Data Source
AI summary
A light emitting device according to an embodiment of the present disclosure includes: a first electrically-conductive layer (10) that is of a first electrically-conductive type; a first high resistance part (51) that is provided in the first electrically-conductive layer (10) and that includes first atoms; a second electrically-conductive layer (20) that is of a second electrically-conductive type; a second high resistance part (52) that is provided in the second electrically-conductive layer (20) and that includes second atoms; and an active layer (30) that is provided between the first electrically-conductive layer (10) and the second electrically-conductive layer (20). A concentration of the first atoms inside the first high resistance part (51) is greater than a concentration of the first atoms in a first surface (11S1) of the first electrically-conductive layer (10).