Light-Emitting Apparatus Impurity Profiles for Leakage Control
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Solution Overview
Problem
Existing display apparatuses using silicide layers in transistors for reducing resistance degrade the properties of light emitting elements, leading to potential degradation and inefficiencies.
Innovation Solution
A light emitting apparatus with transistors having impurity concentration distributions in diffusion regions, where the peak concentration in the second transistor is lower than in the third transistor, reducing leak currents and enhancing stability and luminance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicide layers are arranged in the source and drain of transistors to reduce electric resistance, then the resistance of the transistor is reduced, but the property of the light emitting element is degraded
Solution Approach 1:
The patent applies different impurity concentration distributions to different transistors based on their specific functions. The drive transistor (second transistor) has a lower peak impurity concentration to protect the light emitting element, while the peripheral circuit transistor (third transistor) has a higher peak impurity concentration for low resistance. This local differentiation resolves the contradiction by tailoring the electrical properties to the specific functional requirements of each transistor type.
Solution Approach 2:
The patent changes the impurity concentration parameter differently for different transistors. By controlling the peak impurity concentration to be lower in the drive transistor compared to the peripheral circuit transistor, the patent achieves both low resistance in peripheral circuits and protection of the light emitting element in the drive transistor, thus resolving the contradiction through parameter optimization.
2Reliability
If high impurity concentration is used in transistor diffusion regions to reduce resistance, then electric resistance is reduced, but leak currents increase
Solution Approach 1:
The patent implements local quality differentiation by setting different peak impurity concentrations for different transistors. The drive transistor uses lower peak impurity concentration to minimize leak currents that would affect the light emitting element, while peripheral circuit transistors use higher peak impurity concentration to achieve low resistance for signal processing functions.
Solution Approach 2:
The patent optimizes the impurity concentration parameter by establishing a specific relationship where the peak impurity concentration in the drive transistor is lower than in peripheral circuit transistors. This parameter differentiation allows the system to achieve low resistance where needed while minimizing leak currents in critical paths.
Data Source
AI summary
A light emitting apparatus including a light emitting element, a first transistor and a second transistor arranged on a first face of a silicon substrate, and a third transistor arranged on a peripheral circuit for supplying an image signal to the first transistor. Any one of a source and a drain of the first transistor is connected to a gate electrode of the second transistor. Any one of a source and a drain of the second transistor is connected to the light emitting element. A peak concentration of an impurity concentration in a diffusion region of the second transistor is smaller than a peak concentration of an impurity concentration in a diffusion region of a source or a drain of the third transistor.