Light Emitting Unit Layer Structure for Extraction and Reliability
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Solution Overview
Problem
Current light emitting diodes face challenges in chip reliability and light extraction efficiency, necessitating improved designs for enhanced performance in compact display devices.
Innovation Solution
A light emitting unit comprising a semiconductor layer, a first layer with varying oxygen and nitrogen atomic percentages, and a second layer with greater thickness, positioned to reduce refractive index differences and enhance light extraction, while a third layer with specific thickness and composition improves chip reliability by protecting the semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional light emitting diode structure is used, then the device is simple to manufacture, but the chip reliability is insufficient
Solution Approach 1:
The patent segments the protective layer into three distinct layers (first layer with oxygen atoms, second layer with nitrogen atoms, third layer as cap layer) instead of using a single conventional layer. Each layer has specific thickness parameters and compositional characteristics that work together to improve chip reliability while managing the increased structural complexity through functional specialization.
Solution Approach 2:
The patent employs composite material structure by combining different materials with specific atomic compositions in the protective layers. The first layer contains oxygen atoms, the second layer contains nitrogen atoms, and the third layer serves as a cap, creating a composite structure that enhances reliability through synergistic effects of different materials.
2Reliability
If the semiconductor layer is exposed directly, then the structure is simple, but the light extraction efficiency is reduced due to total reflections
Solution Approach 1:
The patent introduces intermediary protective layers between the semiconductor layer and the external environment. These layers (first layer with oxygen, second layer with nitrogen, and third cap layer) act as mediators that manage the refractive index transition, reducing total internal reflections and improving light extraction efficiency while protecting the semiconductor layer.
Solution Approach 2:
The patent utilizes parameter changes in refractive index across the three protective layers to reduce total internal reflections. By carefully controlling the thickness and compositional parameters of each layer, the refractive index is gradually adjusted, enabling improved light extraction efficiency without requiring complex additional structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves chip reliability and light extraction efficiency by reducing total reflections and increasing the area capable of emitting light, leading to more effective and reliable light emitting diodes for display devices.
Implementation Method 1
the first layer is disposed between the second layer and the semiconductor layer... a first oxygen atomic percentage at the first position is less than a second oxygen atomic percentage at the second position
Implementation Method 2
improves chip reliability and light extraction efficiency by reducing total reflections
Data Source
AI summary
An electronic device includes: a semiconductor layer; a first layer disposed on the semiconductor layer, including at least one of oxygen atoms and nitrogen atoms and having a first maximum thickness; a second layer, wherein the first layer is disposed between the second layer and the semiconductor layer, and the second layer has a second maximum thickness; and a third layer, wherein the second layer is disposed between the first layer and the third layer, the third layer has a third maximum thickness, and the second maximum thickness and the third maximum thickness are greater than the first maximum thickness, wherein the first layer comprises a first position and a second position, the first position is closer to the semiconductor layer than the second position, and a first oxygen atomic percentage at the first position is less than a second oxygen atomic percentage at the second position.