Light-Emitting Device With Peltier Heat Dissipation Layer
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Solution Overview
Problem
Existing light-emitting devices face challenges in effectively diffusing heat generated during high-power, high-intensity operations, often leading to damage due to inefficient heat management, and require separate cooling systems that complicate assembly and power supply wiring.
Innovation Solution
A light-emitting device structure incorporating an Electro-Luminescence (EL) layer with a heat dissipation layer that utilizes the Peltier effect to transfer heat away from the EL layer, where the heat dissipation layer is bonded to the EL layer with a different conductivity type, allowing current to flow and generate heat transfer in the same direction, thereby enhancing heat dissipation without the need for external cooling systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a separate active cooling device is used to dissipate heat, then heat dissipation effectiveness is improved, but device complexity and wiring requirements increase
Solution Approach 1:
The patent combines the light-emitting function and heat dissipation function into a single integrated device structure. The semiconductor light-emitting device is directly mounted on the heat dissipation layer, eliminating the need for separate cooling devices and their associated wiring, thus reducing device complexity while maintaining effective heat dissipation
Solution Approach 2:
The heat dissipation layer serves multiple functions: it acts as both the heat dissipation pathway and the mounting substrate for the semiconductor light-emitting device. This multi-functional design reduces the number of separate components needed, thereby simplifying the overall device structure
2Illumination intensity
If high power is supplied to increase light emission intensity, then illumination intensity is improved, but heat generation increases causing potential damage
Solution Approach 1:
The patent converts the harmful heat generated by high-power operation into a manageable thermal flow by directing it through the heat dissipation layer. The heat that would otherwise damage the device is channeled away through the conductivity-type-mismatched heat dissipation layer, allowing high-intensity light emission without excessive temperature buildup
3Reliability
If the heat dissipation layer has the same conductivity type as the semiconductor layer, then electrical connection is improved, but heat transfer efficiency decreases
Solution Approach 1:
The patent applies different conductivity types in different regions: the semiconductor light-emitting device layers have one conductivity type optimized for light emission, while the heat dissipation layer has the opposite conductivity type optimized for heat transfer. This local differentiation allows each layer to perform its specific function optimally
Solution Approach 2:
The patent changes the conductivity type parameter of the heat dissipation layer to be opposite to that of the semiconductor layer. This parameter change creates the Peltier effect at the interface, which enhances heat transfer efficiency from the light-emitting portion to the heat dissipation layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively dissipates heat generated during high-power operations, reducing the risk of damage to the light-emitting device and simplifying the assembly by integrating cooling functionality within the device, allowing for higher intensity and power output while minimizing electrical resistance and heat generation.
Implementation Method 1
a Peltier effect (that causes heat to be transferred in the same direction as the carrier) generated in the heat dissipation layer causes heat to be transferred in the direction away from the EL layer
Implementation Method 2
the heat conduction of the heat dissipation layer and the heat transfer because of the Peltier effect enables effective heat dissipation
Data Source
AI summary
Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.


