Light-Emitting Device With Ion Implantation Scattering Cavities
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Solution Overview
Problem
Conventional light-emitting diodes (LEDs) face challenges in enhancing light extraction efficiency due to their inherent structural limitations, which restrict their performance and application potential.
Innovation Solution
The introduction of ion implantation regions on the substrate surface to create scattering cavities between the semiconductor layers, facilitating epitaxial growth and enhancing light extraction through the formation of amorphous or crystallized patterns that scatter light emitted from the active layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional smooth substrate surface is used, then the manufacturing process is simple, but the light extraction efficiency is low
Solution Approach 1:
Ion implantation is performed on the substrate surface before epitaxial growth to pre-create a structured surface with scattering cavities. This preliminary action modifies the substrate surface to enhance light extraction efficiency while maintaining a relatively simple overall manufacturing process, as the scattering structure is formed in advance rather than requiring complex post-processing
Solution Approach 2:
The physical and chemical parameters of the substrate surface are changed through ion implantation, creating regions with different crystalline structures (amorphous or crystallized patterns). These parameter changes in the substrate surface enable enhanced light scattering without fundamentally altering the manufacturing workflow
2Loss of energy
If scattering cavities are formed through conventional methods, then light extraction is enhanced, but the manufacturing complexity increases
Solution Approach 1:
The ion implantation process is combined with the existing epitaxial growth process to form scattering cavities. By integrating the scattering structure formation into the substrate preparation stage and utilizing the subsequent epitaxial growth to define cavity patterns, the manufacturing process achieves enhanced light extraction without significantly increasing overall process complexity
Solution Approach 2:
Ion implantation serves as an intermediary process that creates a modified substrate surface, which then guides the epitaxial growth to form scattering cavities. This intermediary approach enables the formation of complex scattering structures through a controlled, two-step process rather than requiring direct complex machining or patterning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves light extraction efficiency by creating a structured surface that enhances the scattering of light, leading to improved performance and efficiency in light-emitting devices, particularly in LEDs.
Implementation Method 1
a substrate including an upper surface, wherein the upper surface includes an ion implantation region
Implementation Method 2
a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region
Data Source
AI summary
A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.