Light-Emitting Element With Segmented Electrodes For Uniform Current

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Solution Overview

Problem

Existing light-emitting elements face challenges in achieving uniform light emission intensity due to variations in electric current density caused by electrode arrangements, leading to deviations in light emission distribution.

Innovation Solution

A light-emitting element design featuring a light transmissive substrate with semiconductor stacked bodies and electrodes arranged to alleviate electric current density deviations, including a first n-side semiconductor layer with holes for the first n-electrode connection and a second n-side semiconductor layer with inner and outer edge connections for the second n-electrode, along with p-side semiconductor layers and electrodes, to enhance light emission uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single n-electrode is provided in the area, then device complexity is reduced, but electric current density becomes non-uniform causing deviation in light emission

Engineering Contradiction:

Improveelectrode structureVSAvoidlight emission uniformity

Core Design Contradiction:

Device complexityVSIllumination intensity

Solution Approach 1:

The single n-electrode is divided into multiple separate n-electrodes positioned at different locations within the semiconductor layer. This segmentation allows independent control of current density in different regions, enabling uniform light emission across the entire area while maintaining relatively simple device structure.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different n-electrodes are strategically positioned to provide localized current injection where needed. The first n-electrode is positioned in the first area and the second n-electrode in the second area, allowing each region to have optimized current density distribution tailored to its specific light emission requirements.

Inventive Principle:

Principle #3Local quality

2Illumination intensity

If multiple n-electrodes are provided in different areas, then light emission uniformity is improved, but device complexity increases

Engineering Contradiction:

Improvelight emission uniformityVSAvoidelectrode structure

Core Design Contradiction:

Illumination intensityVSDevice complexity

Solution Approach 1:

The n-electrode structure is segmented into multiple independent electrodes positioned in different areas of the semiconductor layer. This allows uniform light emission control while keeping each individual electrode simple in structure, balancing performance improvement with device complexity management.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Multiple n-electrodes are combined with the p-electrode structure to form integrated semiconductor regions. The first n-electrode combines with the first p-electrode to form a first semiconductor region, and the second n-electrode combines with the second p-electrode to form a second semiconductor region, creating a unified structure that achieves uniform light emission without excessive complexity.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively reduces electric current density deviations, improving the intensity distribution of light emission and allowing for independent control of light emission intensity across different semiconductor areas.

Implementation Method 1

a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

a second n-electrode having a portion above the second p-electrode, and being electrically connected to the n-side semiconductor layer in an area between the first p-side semiconductor layer and the second p-side semiconductor layer

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 3

a first semiconductor stacked body including: a first n-side semiconductor layer located above part of the light transmissive substrate, and a first p-side semiconductor layer located above the first n-side semiconductor layer

Methodology Applied

Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS9780261B2Light-emitting element and light-emitting device including a first p-side semiconductor layer and a second p-side semiconductor layer

Publication Date: 2017.10.03 NICHIA CORP

AI summary

A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.