Light-Emitting Element Shielding Layer for Stable Display Emission
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Solution Overview
Problem
Existing display devices face challenges in improving light characteristics and maintaining electrical stability of light emitting elements due to issues with electric field interference and light emission efficiency.
Innovation Solution
Incorporation of a shielding layer with a light transmittance of at least 70% and a thickness of 5 nm or less, surrounding the side surfaces of the light emitting layer and partially surrounding the semiconductor layers, to shield electric fields and enhance light reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a shielding layer is added to suppress electric field interference, then electrical stability is improved, but device complexity increases
Solution Approach 1:
The shielding layer is nested within the insulating film, which itself surrounds the light emitting element. This nested configuration allows the shielding layer to be integrated into the existing structure without adding external components, thereby suppressing electric field interference while minimizing increases in device complexity
Solution Approach 2:
The shielding layer acts as an intermediary between the light emitting layer and the external environment, mediating the electric field effects. It provides electrical stability by blocking external electric field interference while allowing light to pass through, thus resolving the contradiction between reliability improvement and structural simplicity
2Productivity
If a shielding layer with high light transmittance (≥70%) is used, then light emission efficiency is improved, but shielding effectiveness against electric fields may be reduced
Solution Approach 1:
The shielding layer's optical and electrical parameters are optimized by controlling its thickness to be between 3-7 nm and using materials with specific properties (such as aluminum oxide or titanium oxide). This parameter optimization allows the layer to maintain high light transmittance (≥70%) while preserving sufficient electric field shielding effectiveness
Solution Approach 2:
The shielding layer is formed using composite material approaches, combining thin film technology with specific dielectric materials that exhibit both optical transparency and electrical shielding properties. This composite approach enables simultaneous achievement of high light transmittance and adequate electric field shielding
3Illumination intensity
If the shielding layer thickness is reduced to ≤5 nm, then light transmittance increases, but manufacturing precision requirements increase
Solution Approach 1:
The thickness parameter of the shielding layer is precisely controlled within the narrow range of 3-7 nm using advanced thin film deposition techniques. This parameter control achieves the optimal balance between light transmittance and manufacturing feasibility, with ≤5 nm thickness providing ≥70% light transmittance
Solution Approach 2:
Traditional mechanical thickness measurement and control methods are replaced with atomic-level deposition control techniques such as atomic layer deposition (ALD) or molecular beam epitaxy (MBE). These techniques enable precise thickness control at the nanometer and sub-nanometer scale, reducing manufacturing precision requirements despite the extremely thin layer thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The shielding layer effectively suppresses electric field interference, enhances light emission efficiency, and improves the lifespan and efficiency of the light emitting elements.
Implementation Method 1
a light reflectance of the shielding layer may be equal to or greater than about 90%, and light emitted from the light emitting layer may be reflected by the shielding layer and may transmit outside the light emitting element through the first semiconductor layer and the electrode layer
Implementation Method 2
A light transmittance of the shielding layer may be equal to or greater than about 70%, and light emitted from the light emitting layer may transmit through the shielding layer
Data Source
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AI summary
A display device comprises a light-emitting element which is disposed on a substrate and includes a first end portion and a second end portion. A first electrode is electrically connected to the first end portion of the light-emitting element. A second electrode is electrically connected to the second end portion of the light-emitting element. A first semiconductor layer, a light-emitting layer, a second semiconductor layer, and an electrode layer of the light-emitting element are sequentially arranged along the longitudinal direction from the second end to the first end. An insulating film of the light-emitting element extends parallel to the longitudinal direction and surrounds the side surfaces of the first semiconductor layer, the light-emitting layer, the second semiconductor layer, and the electrode layer. A shielding layer is disposed inside the insulating film.