Semiconductor Light-Emitting Structure for Uniform Pixel Luminance
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Solution Overview
Problem
The manufacturing of nano-scale light emitting diodes through etching processes results in inconsistent diameters and lengths, leading to varying luminance between pixels, causing poor image quality and lighting defects due to non-uniformity and the need for separate electrode and insulating layer formation.
Innovation Solution
A semiconductor light emitting device with a light emitting structure grown within growth holes of uniform diameter and depth, where an insulating layer and electrodes are formed during manufacturing, ensuring consistent size and electrical connection of light emitting devices, eliminating the need for separate electrode and insulating layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If dry etching process is used to manufacture nano-scale light emitting diodes, then manufacturing capability is achieved, but diameter and length uniformity deteriorates due to plasma density variation
Solution Approach 1:
The patent applies preliminary action by forming uniform nano-scale patterns on the wafer surface before the etching process. These pre-formed patterns serve as masks that define the exact diameter and length of the light emitting diodes, ensuring uniformity regardless of plasma density variations during etching. The patterns are created using a coating process that deposits material to a controlled thickness, establishing precise dimensions before etching begins.
Solution Approach 2:
The patent introduces an intermediary element - the pre-formed nano-scale patterns - that mediates between the etching process and the final LED structure. These patterns act as a template or mask that controls the etching process, ensuring that the plasma removes material uniformly according to the pre-defined pattern geometry rather than being directly controlled by plasma density variations.
2Reliability
If separate electrode and insulating layer formation is performed after manufacturing, then electrical connection is ensured, but device complexity and manufacturing steps increase
Solution Approach 1:
The patent merges the formation of electrodes and insulating layers with the nano-scale pattern formation process. The same coating and etching steps that create the nano-scale patterns also form the electrodes and insulating layers integrated into the structure. This combining of operations eliminates separate manufacturing steps for electrode and insulating layer formation, reducing device complexity while ensuring proper electrical connections through the integrated design.
Solution Approach 2:
The patent applies universality by designing the nano-scale patterns to serve multiple functions simultaneously. The patterns act as both the structural template for the LED and as the electrode/insulating layer formation. This multi-functionality eliminates the need for separate dedicated processes for electrical connection, as the same manufacturing steps that define the LED geometry also establish the electrical structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures uniform luminance across pixels, minimizes lighting defects, and simplifies the manufacturing process by maintaining consistent device size and eliminating the need for additional layer formation, thereby enhancing image quality and reducing material costs.
Implementation Method 1
a light emitting structure (160)... a first conductivity type semiconductor layer (151), an active layer (152), and a second conductivity type semiconductor layer (153)
Data Source
AI summary
A semiconductor light emitting device includes a light emitting structure having a first region and a second region along a major axis direction, an insulating layer surrounding a side surface of the first region, and a first electrode surrounding a side surface of the second region. The thickness of the insulating layer is the same as the thickness of the first electrode. Therefore, when implementing a display, lighting defects can be prevented and luminance deviation can be eliminated, thereby improving image quality.