Light Emitting Thyristor Bandgap Engineering
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Solution Overview
Problem
Existing light emitting thyristors face challenges in improving luminous efficiency while maintaining thyristor characteristics, as introducing a small bandgap layer can adversely affect on-characteristics and off-characteristics specific to thyristors.
Innovation Solution
A light emitting thyristor with a stack structure including a semiconductor substrate and multiple semiconductor layers, where the third semiconductor layer has a small bandgap layer with a bandgap difference of 0.05 eV to 0.15 eV from adjacent layers, and a sixth semiconductor layer with the smallest bandgap, positioned to concentrate carriers and enhance luminous efficiency without compromising thyristor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a small bandgap layer is introduced in a light emitting thyristor to improve luminous efficiency, then light emitting efficiency is improved, but on-characteristics and off-characteristics of the thyristor are adversely affected
Solution Approach 1:
The invention changes the bandgap parameter by introducing a small bandgap layer (sixth semiconductor layer) with a specific bandgap difference (0.05-0.15 eV) relative to adjacent layers. This parameter change concentrates carriers in the small bandgap layer to improve light emission efficiency while the layer is positioned within the third semiconductor layer to maintain thyristor switching characteristics
Solution Approach 2:
The invention applies local quality by creating a specific region (sixth semiconductor layer) with different bandgap properties within the third semiconductor layer. This localized small bandgap region concentrates carriers for enhanced light emission without affecting the overall thyristor structure and switching characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves luminous efficiency while maintaining the on-characteristics and off-characteristics of the thyristor, allowing for effective light emission while ensuring the thyristor can switch between on and off states efficiently.
Implementation Method 1
a difference ΔEg between a bandgap of the fifth semiconductor layer and a bandgap of the sixth semiconductor layer is greater than or equal to 0.05 eV and less than or equal to 0.15 eV
Implementation Method 2
light emitting thyristor having one-dimensionally aligned thyristors as light emitting elements
Data Source
AI summary
A light emitting thyristor includes a stack structure having first to fourth semiconductor layers, and the third semiconductor layer includes at least a fifth semiconductor layer in contact with the second semiconductor layer and a sixth semiconductor layer in this order from the semiconductor substrate side. The sixth semiconductor layer is a layer having the smallest bandgap in all the layers forming the stack structure, and a difference ΔEg in bandgap between the fifth semiconductor layer and the sixth semiconductor layer is greater than or equal to 0.05 eV and less than or equal to 0.15 eV.