Light-Emitting Structures with Trenches for Uniform Current Distribution
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Solution Overview
Problem
Conventional light-emitting devices, such as LEDs, face inefficiencies in current distribution and luminous efficiency due to the concentration of current in local areas, leading to reduced light-emitting performance.
Innovation Solution
The design incorporates a first and second light-emitting structure on a shared semiconductor layer with trenches that expose the semiconductor layer's surface, allowing for separate electrode placement and extending parts to distribute current uniformly between the structures, enhancing luminous efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conventional light-emitting device structure is used, then the device is simple to manufacture, but the current distribution is concentrated in local areas leading to reduced luminous efficiency
Solution Approach 1:
The patent divides the light-emitting device into multiple independent light-emitting structures (first light-emitting structure and second light-emitting structure) formed on separate active layers. This segmentation allows current to be distributed across multiple regions rather than concentrating in a single area, thereby improving luminous efficiency while maintaining a manageable structural complexity through systematic design
Solution Approach 2:
The patent introduces a vertical dimension by forming multiple active layers at different heights on the substrate, with each layer containing light-emitting structures. This three-dimensional arrangement enables current to spread across multiple vertical levels, improving current distribution and luminous efficiency without significantly increasing horizontal device complexity
2Loss of energy
If current is concentrated in local areas, then the device structure is simple, but the luminous efficiency is reduced
Solution Approach 1:
The patent segments the current path by creating multiple independent light-emitting structures on separate active layers. Each structure receives current independently through its own electrode connections, ensuring uniform current distribution across all light-emitting regions and preventing local concentration, thereby improving luminous efficiency
Solution Approach 2:
The patent applies local quality by giving each light-emitting structure its own dedicated electrode and contact configuration. This localized electrode design ensures that current is evenly distributed to each specific light-emitting region according to its needs, improving overall current distribution uniformity and luminous efficiency
3Ease of operation
If multiple light-emitting structures are formed on separate semiconductor layers, then current distribution is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent segments the semiconductor structure into multiple discrete active layers, each capable of being processed independently to some extent. This segmentation allows for modular manufacturing where each layer can be grown and processed with standardized techniques, making the overall complex structure more manageable through systematic, repeatable processes
Solution Approach 2:
The patent employs universal processing techniques for forming the multiple active layers and light-emitting structures. The same basic fabrication processes (epitaxial growth, patterning, etching, electrode deposition) are applied repeatedly to each layer, making the manufacturing process complex in outcome but systematic and manageable in execution through standardized multi-step procedures
Data Source
AI summary
A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.