Light Guide Layer for Nitride Semiconductor Light Extraction
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Solution Overview
Problem
Existing light-emitting devices using Group III-V nitride semiconductors face challenges in achieving high light extraction efficiency due to the limited contact area between the electrode and the semiconductor layer, which affects current injection and quantum efficiency.
Innovation Solution
Incorporating a light guide layer between the semiconductor layer and the electrode, which reduces the contact area and enhances light extraction by guiding light away from the electrode, thereby improving light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the electrode contacts the semiconductor layer directly to ensure current injection, then current injection efficiency is improved, but light extraction efficiency deteriorates due to increased light absorption by the electrode
Solution Approach 1:
A light guide layer is introduced as an intermediary between the electrode and the semiconductor layer. This light guide layer has a lower refractive index than the semiconductor layer, creating a refractive index difference that guides light away from the electrode and reduces light absorption, thereby improving light extraction efficiency while maintaining current injection through the electrode
2Reliability
If the contact area between electrode and semiconductor layer is increased to improve current injection, then current injection efficiency is improved, but light extraction efficiency deteriorates due to larger electrode area absorbing light
Solution Approach 1:
The light guide layer acts as a mediator that allows the electrode to have a larger contact area with the semiconductor layer for improved current injection, while simultaneously guiding the emitted light away from the electrode through refractive index differences, thus preventing the expected decrease in light extraction efficiency
Solution Approach 2:
The patent utilizes changes in refractive index parameters by selecting materials with specific refractive index characteristics. The light guide layer has a lower refractive index than the semiconductor layer, creating a parameter difference that enables light guiding and extraction improvement while maintaining electrical contact
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The light guide layer effectively increases light extraction efficiency by reducing absorption and enhancing the emission of light from the semiconductor layer, while maintaining current injection efficiency.
Implementation Method 1
a light guide layer between the electrode and the first semiconductor layer... effectively increases light extraction efficiency by reducing absorption and enhancing the emission of light from the semiconductor layer
Data Source
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AI summary
Provided are a light emitting device, an electrod structure, a light emitting device package, and a lighting system. The light emitting device includes a conductive layer, an electrode, a light emitting structure layer disposed between the electrode and the conductive layer and comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and a light guide layer between the first semiconductor layer and the electrode.