Semiconductor Light-Receiving Element Stress Management

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Solution Overview

Problem

Semiconductor light-receiving elements face stress issues due to internal stresses in insulating films, which affect light-receiving characteristics, particularly when silicon nitride films are used on both sides of the light-receiving portion.

Innovation Solution

A lamination structure of insulating films, including a first silicon nitride film, a silicon oxynitride film, and a second silicon nitride film, with a resin film sandwiched between them, is used to reduce stress on the light-receiving portion by canceling out internal stresses and improving adhesiveness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If silicon nitride films are used as insulating films on both sides of the light-receiving portion, then adhesiveness between the insulating film and the light-receiving portion is improved, but stress is applied to the light-receiving portion due to internal stress in the films

Engineering Contradiction:
ImproveadhesivenessVSAvoidstress
Core Design Contradiction:
StrengthVSStress or pressure

Solution Approach 1:

The insulating film is divided into multiple layers (first insulating film, second insulating film, and third insulating film) with different materials and stress characteristics. Each layer contributes differently to adhesiveness and stress, allowing the system to achieve both high adhesiveness and low overall stress on the light-receiving portion.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the material composition and stress parameters of the insulating films. Specifically, it uses a silicon oxynitride film (second insulating film) with compression stress between two silicon nitride films (first and third insulating films) with tensile stress, thereby balancing the overall stress while maintaining adhesiveness.

Inventive Principle:
Principle #35Parameter changes

2Stress or pressure

If a resin film is provided adjacent to the light-receiving portion, then stress on the light-receiving portion is reduced, but the structure complexity increases

Engineering Contradiction:
ImprovestressVSAvoidstructure complexity
Core Design Contradiction:
Stress or pressureVSDevice complexity

Solution Approach 1:

The resin film is integrated into the existing multi-layer insulating film structure, merging the stress-relief function with the insulating and protective functions. The resin film is positioned between the first and second insulating films, combining multiple functions into a unified structure rather than adding a separate independent component.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS8970013B2Semiconductor light-receiving element
Publication Date: 2015.03.03 SUMITOMO ELECTRIC DEVICE INNOVATIONS
  • US8970013B2 patent drawing
  • US8970013B2 patent drawing
  • US8970013B2 patent drawing

AI summary

A semiconductor light-receiving element includes: a light-receiving portion that is provided on a semi-insulating substrate and has a mesa shape in which semiconductor layers are laminated; a lamination structure of insulating films that is provided on a part of a side face of the light-receiving portion and has a structure in which a first insulating film comprised of a silicon nitride film, a second insulating film comprised of a silicon oxynitride film and a third insulating film comprised of a silicon nitride film are laminated in contact with each other; and a resin film that is provided adjacent to the light-receiving portion, the resin film being sandwiched in or between any of the first insulating film, the second insulating film and the third insulating film.