Light Sensing Device With Metal Oxide Semiconductor Layers
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Solution Overview
Problem
Existing light sensing devices face challenges in integrating ultraviolet and visible light sensors due to differences in light sensitive materials, leading to complex fabrication processes and increased production costs, with GaN and AlGaN being pollutant-prone and amorphous silicon or polysilicon being unstable.
Innovation Solution
A light sensing device is designed with a first metal oxide semiconductor layer for ultraviolet light absorption and a second metal oxide semiconductor layer combined with an organic light-sensitive layer for visible light absorption, both on a substrate, allowing for simplified integration and mass production by using indium gallium zinc oxide, indium zinc oxide, or indium zinc tin oxide semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If GaN or AlGaN is used as ultraviolet light sensing material, then ultraviolet light sensing capability is achieved, but the formation process becomes highly polluted and difficult to integrate with existing semiconductor processes
Solution Approach 1:
The patent changes the material parameter from traditional GaN/AlGaN to metal oxide semiconductor (such as ZnO, In2O3, or their alloys), which maintains ultraviolet light sensing capability while enabling compatibility with existing semiconductor fabrication processes through standard deposition and processing techniques
Solution Approach 2:
The patent employs composite material structures where metal oxide semiconductor layers are combined with organic light-sensitive layers to create a multi-functional sensor that achieves both ultraviolet and visible light sensing capabilities while maintaining process compatibility
2Reliability
If amorphous silicon or polysilicon is used as visible light sensing material, then visible light sensing capability is achieved, but the stability of the sensor becomes poor
Solution Approach 1:
The patent combines metal oxide semiconductor layers with organic light-sensitive layers to form a composite structure that achieves visible light sensing capability while the metal oxide semiconductor provides structural stability and the organic layer provides light sensitivity, overcoming the instability of pure amorphous silicon or polysilicon
3Adaptability or versatility
If ultraviolet sensors and visible light sensors are integrated, then multi-wavelength light sensing capability is achieved, but the complexity of the integrated fabricating process increases and production cost increases
Solution Approach 1:
The patent merges ultraviolet sensing and visible light sensing functions into a single integrated device structure where metal oxide semiconductor layers and organic light-sensitive layers are combined, allowing both sensing capabilities to coexist in one device and simplifying the overall fabrication process
Solution Approach 2:
The patent creates a universal sensor platform using metal oxide semiconductor materials that can serve multiple functions - detecting both ultraviolet and visible light wavelengths - thereby eliminating the need for separate specialized sensors and reducing overall system complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the simultaneous sensing of ultraviolet and visible light with different wavebands using metal oxide semiconductor layers, simplifying the fabrication process and reducing production costs by allowing for various threshold voltages to be controlled, thus facilitating the design of more efficient light sensing devices.
Implementation Method 1
The first light sensor includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband
Implementation Method 2
The second light sensor includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband
Data Source
AI summary
A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband.