Light Detection Substrate Openings for H Ion Release

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Solution Overview

Problem

The Metal-Semiconductor-Metal (MSM) light detection structure faces issues with H ion diffusion affecting TFT characteristics, leading to threshold voltage drift and incomplete H ion release during annealing, causing abnormal TFT characteristics and potential peeling of the a-Si:H layer due to excessive gas retention.

Innovation Solution

The light detection substrate features a photoelectric conversion layer with strategically formed openings that facilitate H ion and water vapor release during annealing, preventing electrode oxidation and maintaining TFT characteristics by ensuring the openings do not overlap with electrodes, thus maintaining photoelectric performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the photoelectric conversion layer is formed as a continuous layer covering the electrodes, then the photoelectric conversion efficiency is improved, but H ion diffusion affects TFT characteristics causing threshold voltage drift

Engineering Contradiction:
ImproveTFT characteristics stabilityVSAvoidH ion diffusion
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The photoelectric conversion layer is segmented by forming openings (through-holes or recesses) that divide the continuous layer into isolated regions. These openings allow H ions to be released and prevented from diffusing into the TFT active layer, while the remaining photoelectric conversion layer portions maintain sufficient coverage over the electrodes for effective photoelectric conversion.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The harmful H ions are extracted from the system by providing escape pathways through the openings in the photoelectric conversion layer. The openings serve as channels for H ions to diffuse out from the photoelectric conversion layer toward the surface, preventing accumulation and subsequent diffusion into the TFT structure.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If openings are formed in the photoelectric conversion layer to release H ions, then TFT characteristics are maintained, but electrode oxidation may occur if openings overlap with electrodes

Engineering Contradiction:
ImproveTFT characteristicsVSAvoidElectrode oxidation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The openings are strategically positioned in regions where they do not overlap with the electrodes in the planar direction. This local quality control ensures that while H ion release is enabled in the opening regions, the electrode surfaces remain protected from oxidation by maintaining continuous coverage where the electrodes are located.

Inventive Principle:
Principle #3Local quality

3Reliability

If the photoelectric conversion layer is made thick to improve detection sensitivity, then photoelectric performance is enhanced, but gas retention increases causing peeling during annealing

Engineering Contradiction:
ImprovePhotoelectric performanceVSAvoidLayer adhesion
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

Even in thick photoelectric conversion layers, openings are formed to segment the structure and provide pathways for gas and H ion release. This prevents excessive gas accumulation within the thick layer during annealing, maintaining adhesion between layers while preserving the thickness needed for sensitive photoelectric detection.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution ensures normal TFT characteristics across the substrate, reduces signal crosstalk, and prevents peeling of the photoelectric conversion layer, enhancing the overall performance and reliability of the light detection substrate.

Implementation Method 1

each of the plurality of light detection units including a first electrode, a second electrode, and a photoelectric conversion layer

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

facilitate H ion and water vapor release during annealing

Methodology Applied
Scientific EffectAnnealing: Annealing

Data Source

PatentUS12080731B2Light detection substrate, manufacturing method thereof and light detection apparatus
Publication Date: 2024.09.03 BOE TECHNOLOGY GROUP CO LTD
  • US12080731B2 patent drawing
  • US12080731B2 patent drawing
  • US12080731B2 patent drawing

AI summary

The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.