Light-Transmitting Capacitor for Semiconductor Aperture Ratio
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Solution Overview
Problem
Conventional semiconductor devices face challenges in increasing the charge capacity of capacitors while maintaining a high aperture ratio, leading to reduced display quality due to the trade-off between capacitor area and pixel transparency.
Innovation Solution
A semiconductor device with a light-transmitting capacitor structure, where a light-transmitting semiconductor film serves as one electrode, a light-transmitting conductive film serves as the other electrode, and a light-transmitting insulating film acts as the dielectric, allowing for increased capacitor area without compromising the aperture ratio, using oxide semiconductors and specific doping methods to enhance conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the area of light-blocking conductive film is increased to increase the area where a pair of electrodes overlap, then the charge capacity of the capacitor is increased, but the aperture ratio of the pixel is lowered and display quality is degraded
Solution Approach 1:
The patent applies the principle of optical property changes by using light-transmitting conductive films instead of conventional light-blocking conductive films for the capacitor electrodes. This material substitution allows the capacitor to maintain high charge capacity while being optically transparent, thereby resolving the contradiction between charge capacity and aperture ratio. The light-transmitting property of the conductive film enables light to pass through the capacitor region, preserving display quality while the sufficient electrode area ensures adequate charge storage capability.
2Quantity of substance
If the area of the capacitor is increased to increase charge capacity, then more charge can be stored, but the pixel area available for light transmission is reduced
Solution Approach 1:
The patent transforms the optical characteristics of the capacitor structure by employing light-transmitting conductive films and light-transmitting insulating films. This allows the capacitor to occupy a larger area within the pixel without blocking light, thereby increasing charge capacity while maintaining a high aperture ratio. The optical transparency of the capacitor components eliminates the traditional trade-off between capacitor size and light transmission area.
3Illumination intensity
If a light-transmitting structure is used for the capacitor, then the aperture ratio is improved, but the conductivity and charge capacity may be insufficient
Solution Approach 1:
The patent employs composite material structures to achieve both high transparency and high conductivity. The capacitor is constructed with light-transmitting conductive films (such as ITO, IZO, or In-Ga-Zn-O) combined with light-transmitting insulating films (such as silicon oxide or silicon nitride). This composite structure ensures that the capacitor maintains optical transparency for high aperture ratio while the conductive film layer provides sufficient conductivity and charge storage capability, resolving the contradiction between transparency and charge capacity.
Solution Approach 2:
The patent utilizes parameter optimization by controlling the thickness, composition, and doping levels of the light-transmitting conductive films. By adjusting these parameters, the film's conductivity can be enhanced while maintaining its optical transparency. Additionally, the dielectric constant of the insulating film is optimized to increase capacitance density, thereby achieving high charge capacity without compromising the light-transmitting property and aperture ratio.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a semiconductor device with enhanced charge capacity and improved display quality by maintaining a high aperture ratio, reducing power consumption, and minimizing variations in electrical characteristics.
Implementation Method 1
a light-transmitting semiconductor film serves as one electrode of the capacitor, a light-transmitting conductive film serves as the other electrode of the capacitor, and a light-transmitting insulating film serves as a dielectric film
Implementation Method 2
the conductivity of the semiconductor film serving as one electrode of the capacitor is greater than or equal to 10 S/cm and less than or equal to 1000 S/cm
Implementation Method 3
it is preferable to add one or more selected from boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element to the semiconductor film. An ion implantation method, an ion doping method, or the like may be employed to add the element to the semiconductor film
Implementation Method 4
In the capacitor, a light-transmitting semiconductor film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film
Data Source
AI summary
To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.