Light-Transmitting Capacitor for High Aperture Ratio Displays

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Solution Overview

Problem

In display devices, increasing the capacitance of capacitors to maintain liquid crystal molecule alignment and reduce power consumption is challenging, as it often requires increasing the area of light-blocking conductive films, which decreases the aperture ratio and degrades image quality.

Innovation Solution

A semiconductor device with a light-transmitting capacitor using an oxide semiconductor layer as one electrode and a transparent conductive film as the other, with a dielectric formed by insulating films, allowing for increased charge capacity while maintaining a high aperture ratio.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the area of light-blocking conductive film is increased to increase capacitor charge capacity, then the charge capacity increases, but the aperture ratio decreases

Engineering Contradiction:
Improvecharge capacityVSAvoidaperture ratio
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent changes the optical parameter (transparency) of the capacitor electrodes from opaque to transparent. By using transparent conductive films and oxide semiconductor layers with high light transmittance, the capacitor can provide sufficient charge capacity while allowing light to pass through, thereby resolving the contradiction between charge capacity and aperture ratio.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures including transparent conductive films combined with oxide semiconductor layers to form the capacitor electrodes. This composite approach enables both electrical functionality (charge storage) and optical functionality (light transmission) to coexist, simultaneously achieving high charge capacity and high aperture ratio.

Inventive Principle:
Principle #40Composite materials

2Quantity of substance

If conventional light-blocking films are used for capacitor electrodes, then charge capacity can be increased, but display quality degrades due to reduced aperture ratio

Engineering Contradiction:
Improvecharge capacityVSAvoiddisplay quality
Core Design Contradiction:
Quantity of substanceVSIllumination intensity

Solution Approach 1:

The patent fundamentally changes the optical parameter of the capacitor electrodes from light-blocking to light-transmitting by selecting transparent materials. This parameter change allows the capacitor to maintain high charge capacity while improving light transmission, thereby enhancing display quality without sacrificing electrical performance.

Inventive Principle:
Principle #35Parameter changes

3Area of stationary object

If transparent materials are used for capacitor electrodes, then aperture ratio improves, but charge capacity may be reduced

Engineering Contradiction:
Improveaperture ratioVSAvoidcharge capacity
Core Design Contradiction:
Area of stationary objectVSQuantity of substance

Solution Approach 1:

The patent uses composite material structures where transparent conductive films are combined with oxide semiconductor layers. This composite design enables the capacitor electrodes to simultaneously achieve high light transmittance (improving aperture ratio) and sufficient electrical conductivity and charge storage capacity, resolving the trade-off between optical and electrical performance.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS9705006B2Semiconductor device and manufacturing method of the same
Publication Date: 2017.07.11 SEMICON ENERGY LAB CO LTD
  • US9705006B2 patent drawing
  • US9705006B2 patent drawing
  • US9705006B2 patent drawing

AI summary

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a nitride insulating film, a transistor over the nitride insulating film, and a capacitor including a pair of electrodes over the nitride insulating film. An oxide semiconductor layer is used for a channel formation region of the transistor and one of the electrodes of the capacitor. A transparent conductive film is used for the other electrode of the capacitor. One electrode of the capacitor is in contact with the nitride insulating film, and the other electrode of the capacitor is electrically connected to one of a source electrode and a drain electrode of the transistor.