Light-Transmitting Capacitor Electrode Design for Aperture Ratio
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices face challenges in increasing the charge capacity of capacitors while maintaining a high aperture ratio, leading to reduced display quality due to the trade-off between capacitor area and pixel transparency.
Innovation Solution
A semiconductor device with a light-transmitting capacitor design, where a light-transmitting semiconductor film serves as one electrode, a pixel electrode as the other, and a stacked insulating film acts as the dielectric, utilizing oxide insulating films and nitride insulating films to enhance conductivity and reduce impurity transfer, allowing for increased capacitor area without compromising aperture ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the area of the light-blocking conductive film is increased to increase the overlapping region of the two electrodes, then the charge capacity of the capacitor is increased, but the aperture ratio of the pixel is lowered and display quality is degraded
Solution Approach 1:
The patent applies the principle of optical property changes by using a light-transmitting conductive film instead of a conventional light-blocking conductive film for the capacitor electrode. This material change allows the capacitor to maintain high charge capacity while being optically transparent, thus resolving the contradiction between increasing capacitor area and maintaining aperture ratio.
Solution Approach 2:
The patent employs a composite structure consisting of multiple layers including a light-transmitting conductive film, light-transmitting insulating films, and light-transmitting semiconductor films. This composite material approach enables the capacitor to achieve both electrical functionality (charge storage) and optical transparency, simultaneously improving charge capacity while maintaining high aperture ratio.
2Illumination intensity
If a light-transmitting conductive film is used as the capacitor electrode, then the aperture ratio is improved, but the conductivity and charge capacity may be compromised
Solution Approach 1:
The patent uses a composite structure with light-transmitting conductive film in combination with light-transmitting insulating films and light-transmitting semiconductor films. This composite approach ensures that the capacitor maintains adequate conductivity for charge storage while preserving optical transparency for high aperture ratio.
Solution Approach 2:
The patent optimizes the physical and chemical parameters of the light-transmitting conductive film and surrounding layers to achieve the right balance between conductivity and transparency. By controlling film thickness, material composition, and structural parameters, the system achieves both electrical reliability and optical performance.
3Manufacturing precision
If oxide insulating films are used in the stacked insulating film structure, then impurity transfer is reduced and manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The patent employs a stacked insulating film structure comprising multiple oxide insulating films with different compositions and functions. This composite insulating structure provides superior impurity barrier properties and manufacturing precision, with each layer serving specific purposes in preventing impurity transfer while maintaining overall system reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the charge capacity of capacitors while improving the aperture ratio, resulting in enhanced display quality and reduced power consumption, particularly in high-resolution liquid crystal display devices.
Implementation Method 1
a light-transmitting insulating film provided over the light-transmitting semiconductor film serves as the dielectric film
Implementation Method 2
The first oxide insulating film is formed by a chemical vapor deposition method using a deposition gas containing silicon and an oxidizing gas
Implementation Method 3
a nitride insulating film formed between the transistor and the oxide insulating film can prevent transfer of impurities such as carbon contained in the oxide insulating films to the transistor
Data Source
AI summary
A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.