Light-Transmitting Capacitor Electrode for High Aperture Ratio

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional semiconductor devices face challenges in achieving a high aperture ratio and increased capacitance while maintaining low power consumption, as increasing the capacitor's area to enhance capacitance degrades the display quality by lowering the aperture ratio.

Innovation Solution

A semiconductor device design featuring a light-transmitting capacitor with one electrode formed using an oxide semiconductor film, where the oxide semiconductor film is processed to have high visible light transmittance and low off-state current, and the capacitor is integrated with a transistor, allowing for increased capacitance without reducing the aperture ratio, as the oxide semiconductor film serves as one electrode and the pixel electrode serves as the other, with a dielectric film formed using insulating films.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the area of the light-shielding conductive film is increased to increase the capacitance of the capacitor, then the capacitance value is improved, but the aperture ratio of the pixel is lowered and display quality is degraded

Engineering Contradiction:
Improvecapacitance valueVSAvoidaperture ratio
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent applies the principle of optical property changes by using a light-transmitting conductive film instead of a conventional light-shielding conductive film for the capacitor electrode. This material change allows the capacitor to transmit light, thereby maintaining a high aperture ratio while providing sufficient capacitance for liquid crystal molecule alignment control.

Inventive Principle:
Principle #32Color changes

Solution Approach 2:

The patent changes the electrical and optical parameters of the conductive film by using materials with appropriate work functions and light-transmitting properties. The conductive film is designed to have both high conductivity (≥10⁻⁶ S/cm) and high light transmittance, enabling it to serve as an effective capacitor electrode without blocking light and reducing aperture ratio.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If the area of the capacitor is increased to enhance capacitance, then the capacitance value is improved, but the display quality is degraded due to lower aperture ratio

Engineering Contradiction:
Improvecapacitance valueVSAvoiddisplay quality
Core Design Contradiction:
Quantity of substanceVSIllumination intensity

Solution Approach 1:

The patent transforms the optical characteristics of the capacitor electrode from light-shielding to light-transmitting. By using a conductive film with high light transmittance, the capacitor no longer blocks light from passing through the pixel, thereby maintaining high display quality and aperture ratio while providing the necessary capacitance for proper liquid crystal operation.

Inventive Principle:
Principle #32Color changes

Solution Approach 2:

The light-transmitting conductive film serves multiple functions simultaneously: it provides the necessary electrical conductivity for capacitor operation, maintains high light transmittance for display quality, and enables the capacitor to be formed in the pixel area without compromising aperture ratio. This multi-functionality resolves the contradiction between capacitance requirements and display quality.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables a semiconductor device with improved aperture ratio and capacitance, resulting in enhanced display quality and reduced power consumption, as the light-transmitting capacitor can be formed in areas not occupied by transistors, and the oxide semiconductor film's conductivity is increased for efficient operation.

Implementation Method 1

an oxide semiconductor that has an energy gap of greater than or equal to 3.0 eV and has high visible light transmittance

Methodology Applied
Scientific EffectLight transmission through oxide semiconductor: Absorption (EM radiation)

Data Source

PatentUS9425220B2Semiconductor device
Publication Date: 2016.08.23 SEMICON ENERGY LAB CO LTD
  • US9425220B2 patent drawing
  • US9425220B2 patent drawing
  • US9425220B2 patent drawing

AI summary

A semiconductor device having a high aperture ratio, including a capacitor with increased capacitance, and consuming low power is provided. The semiconductor device includes pixels defined by x (x is an integer of 2 or more) scan lines and y (y is an integer of 1 or more) signal lines, and each of the pixels includes a transistor, and a capacitor. The transistor includes a semiconductor film having a light-transmitting property. The capacitor includes a dielectric film between a pair of electrodes. In the capacitor between an (m−1)-th (m is an integer of 2 or more and x or less) scan line and an m-th scan line, a semiconductor film on the same surface as the semiconductor film having a light-transmitting property of the transistor serves as one of the pair of electrodes and is electrically connected to the (m−1)-th scan line.