Line-Shaped Semiconductor Thin Film Transistor for High Mobility

The patent changes the crystalline state parameter of silicon from amorphous to single crystal by using a solid phase epitaxial growth process. This parameter change enables the silicon to achieve high field effect mobility comparable to polysilicon while still being compatible with low temperature processing on glass substrates, thus resolving the contradiction between deposition temperature and field effect mobility.

The patent extracts and eliminates the complex multiple crystallization processes typically required for polysilicon manufacturing. By using a single solid phase epitaxial growth process from amorphous silicon, the invention achieves high mobility polysilicon-like performance while removing the complicated manufacturing steps, thus resolving the contradiction between field effect mobility and manufacturing process complexity.

The patent transitions from a planar two-dimensional semiconductor structure to a three-dimensional vertical structure by forming holes through the semiconductor layer and filling them with conductive materials. This dimensional change enables better electrode-semiconductor contact and improved device performance while maintaining manufacturing simplicity and increasing the aperture ratio.